公开(公告)号：US08890280B2

公开(公告)日：2014-11-18

申请号：US13033701

申请日：2011-02-24

申请人： Xiaorong Luo ,  Guoliang Yao ,  Tianfei Lei ,  Yuangang Wang ,  Bo Zhang

发明人： Xiaorong Luo ,  Guoliang Yao ,  Tianfei Lei ,  Yuangang Wang ,  Bo Zhang

IPC分类号： H01L23/58 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/739 ,  H01L21/265 ,  H01L29/08

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/66734 ,  H01L29/7397

摘要： The present invention relates to a semiconductor device. The device comprises a semiconductor substrate. A semiconductor drift region is on the semiconductor substrate. The semiconductor drift region comprises a semiconductor region of a first conduction type and a semiconductor region of a second conduction type. The semiconductor region of the first conduction type and the semiconductor region of the second conduction type form a superjunction structure. A high-K dielectric is on the semiconductor substrate. The high-K dielectric is adjacent to the semiconductor region of the second conduction type. An active region is on the semiconductor drift region. A trench gate structure is on the high-K dielectric, the trench gate structure being adjacent to the active region. The semiconductor region of the second conduction type is formed by shallow angle ion implantation, thus its width is narrow and its concentration is high.

摘要翻译： 本发明涉及一种半导体器件。 该器件包括半导体衬底。 半导体漂移区位于半导体衬底上。 半导体漂移区域包括第一导电类型的半导体区域和第二导电类型的半导体区域。 第一导电类型的半导体区域和第二导电类型的半导体区域形成超结构结构。 高K电介质在半导体衬底上。 高K电介质与第二导电类型的半导体区域相邻。 有源区位于半导体漂移区上。 沟槽栅极结构位于高K电介质上，沟槽栅极结构邻近有源区。 第二导电类型的半导体区域通过浅角离子注入形成，其宽度窄并且其浓度高。

公开(公告)号：US20120168856A1

公开(公告)日：2012-07-05

申请号：US13033701

申请日：2011-02-24

申请人： Xiaorong Luo ,  Guoliang Yao ,  Tianfei Lei ,  Yuangang Wang ,  Bo Zhang

发明人： Xiaorong Luo ,  Guoliang Yao ,  Tianfei Lei ,  Yuangang Wang ,  Bo Zhang

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/66734 ,  H01L29/7397

摘要： The present invention relates to a semiconductor device. The device comprises a semiconductor substrate. A semiconductor drift region is on the semiconductor substrate. The semiconductor drift region comprises a semiconductor region of a first conduction type and a semiconductor region of a second conduction type. The semiconductor region of the first conduction type and the semiconductor region of the second conduction type form a superjunction structure. A high-K dielectric is on the semiconductor substrate. The high-K dielectric is adjacent to the semiconductor region of the second conduction type. An active region is on the semiconductor drift region. A trench gate structure is on the high-K dielectric, the trench gate structure being adjacent to the active region. The semiconductor region of the second conduction type is formed by shallow angle ion implantation, thus its width is narrow and its concentration is high.

摘要翻译： 本发明涉及一种半导体器件。 该器件包括半导体衬底。 半导体漂移区位于半导体衬底上。 半导体漂移区域包括第一导电类型的半导体区域和第二导电类型的半导体区域。 第一导电类型的半导体区域和第二导电类型的半导体区域形成超结构结构。 高K电介质在半导体衬底上。 高K电介质与第二导电类型的半导体区域相邻。 有源区位于半导体漂移区上。 沟槽栅极结构位于高K电介质上，沟槽栅极结构邻近有源区。 第二导电类型的半导体区域通过浅角离子注入形成，其宽度窄并且其浓度高。