公开(公告)号：US06784094B2

公开(公告)日：2004-08-31

申请号：US10744261

申请日：2003-12-22

申请人： Zhiping Yin ,  Gurtej Sandhn

发明人： Zhiping Yin ,  Gurtej Sandhn

IPC分类号： H01L214763

CPC分类号： H01L21/76897 ,  H01L21/0276 ,  H01L21/318 ,  H01L21/76802 ,  H01L21/76814

摘要： An anti-reflective coating material layer is provided that has a relatively high etch rate such that it can be removed simultaneously with the cleaning of a defined opening in a relatively short period of time without affecting the critical dimensions of the opening. A method of forming such a layer includes providing a substrate assembly surface and using a gas mixture of at least a silicon containing precursor, a nitrogen containing precursor, and an oxygen containing precursor. The layer is formed at a temperature in the range of about 50° C. to about 600° C. Generally, the anti-reflective coating material layer deposited is SixOyNz:H, where x is in the range of about 0.39 to about 0.65, y is in the range of about 0.02 to about 0.56, z is in the range of about 0.05 to about 0.33, and where the atomic percentage of hydrogen in the inorganic anti-reflective coating material layer is in the range of about 10 atomic percent to about 40 atomic percent. The total SiH4 flow is generally in the range of about 80 sccm to about 400 sccm. The gas mixture may include SiH4 and N2O, where the ratio of SiH4:N2O is in the range of about 0.25 to 0.60. The inorganic anti-reflective coating material layer may be used for defining contact openings, openings for forming capacitor structures, or any other openings in oxide layers.

摘要翻译： 提供了具有相对高的蚀刻速率的抗反射涂层材料层，使得其可以在相对较短的时间段内清洁所定义的开口同时移除，而不影响开口的临界尺寸。 形成这种层的方法包括提供衬底组合表面并使用至少含硅前体，含氮前体和含氧前体的气体混合物。 该层在约50℃至约600℃的温度范围内形成。通常，沉积的抗反射涂层材料为SixOyNz：H，其中x在约0.39至约0.65的范围内， y在约0.02至约0.56的范围内，z在约0.05至约0.33的范围内，并且其中无机抗反射涂层材料层中的氢的原子百分比在约10原子％至 约40原子％。 总SiH 4流通常在约80sccm至约400sccm的范围内。 气体混合物可以包括SiH 4和N 2 O，其中SiH 4 :N 2 O的比例在约0.25至0.60的范围内。 无机抗反射涂层材料层可用于限定接触开口，用于形成电容器结构的开口或氧化物层中的任何其它开口。