公开(公告)号：US20070247900A1

公开(公告)日：2007-10-25

申请号：US11379527

申请日：2006-04-20

Applicant: Wen-Chin Lin ,  Denny Tang ,  H.C. Cheng

Inventor： Wen-Chin Lin ,  Denny Tang ,  H.C. Cheng

IPC: G11C11/14

CPC classification number: G11C11/16

Abstract: Disclosed herein are various embodiments of a 3-parameter switching technique for MRAM memory cells arranged on an MRAM array. The disclosed technique alters the relationship between the disturbance margin and write margin of MRAM arrays to reduce the overall disturbance for the arrays by either enlarging the write margin with respect to the original disturbance margin or enlarging the disturbance margin in view of the original write margin. In either approach, the disclosed 3-parameter switching technique successfully decreases the inadvertent writing of unselected bits.

Abstract translation: 这里公开了布置在MRAM阵列上的MRAM存储器单元的3参数切换技术的各种实施例。 所公开的技术改变MRAM阵列的扰动余量与写入余量之间的关系，以通过相对于原始干扰裕度放大写入裕度或者根据原始写入裕度来扩大扰动余量来减小阵列的整体干扰。 在任一方法中，所公开的3参数切换技术成功地减少了无选择位的无意写入。