公开(公告)号：US20240305268A1

公开(公告)日：2024-09-12

申请号：US18271311

申请日：2022-12-20

Applicant: HEYUAN AIFO LIGHT COMMUNICATION TECHNOLOGY CO., LTD.

Inventor： Guoqiang Li

IPC: H03H9/17 ,  H03H3/02

CPC classification number: H03H9/175 ,  H03H3/02 ,  H03H9/176 ,  H03H2003/025

Abstract: A single crystal film bulk acoustic wave resonator includes a substrate layer, a Bragg reflection layer, a first bonding layer, a second bonding layer, a piezoelectric layer and an electrode layer; a width of the electrode layer is smaller than that of the piezoelectric layer. The resonator further includes a first silicon oxide layer and a second silicon oxide layer, which surround the first bonding layer and the second bonding layer respectively, and a plurality of first air holes horizontally arranged and a plurality of second air holes horizontally arranged are respectively formed in the first silicon oxide layer and the second silicon oxide layer. Each of the plurality of first air holes corresponds to and is communicated with a respective one of the plurality of second air holes. The piezoelectric layer is made of AlN or lithium niobate.

公开(公告)号：US20240305267A1

公开(公告)日：2024-09-12

申请号：US18271325

申请日：2022-12-20

Applicant: HEYUAN AIFO LIGHT COMMUNICATION TECHNOLOGY CO., LTD

Inventor： Guoqiang Li

IPC: H03H9/17 ,  H03H3/02

CPC classification number: H03H9/173 ,  H03H3/02 ,  H03H9/176 ,  H03H2003/021

Abstract: A bulk acoustic wave resonator capable of improving a power capacity includes a substrate, a first diamond film layer, a piezoelectric layer and a second diamond film layer; a first cavity is formed in the first diamond film layer; a bottom electrode is arranged on the first diamond film layer and located in the piezoelectric layer; a second cavity is formed in the second diamond film layer, and a top electrode is arranged in the second cavity on the piezoelectric layer; a first through hole is formed between the top electrode and the bottom electrode, and the first through hole penetrates through the top electrode and the bottom electrode, and communicates with the first cavity and the second cavity; and a second through hole is further formed in the second diamond film layer, and the second through hole communicates with the second cavity and the outside.