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公开(公告)号：US20240283428A1
公开(公告)日：2024-08-22
申请号：US18444030
申请日：2024-02-16
发明人： Andrew Guyette , Pintu Adhikari , Santhosh Gottuparthy , Wei Yang
CPC分类号： H03H9/542 , H03H3/02 , H03H9/02228 , H03H9/173 , H03H9/564 , H03H9/566 , H03H2003/021
摘要： A filter is provided that includes resonators connected in series between first and second ports. Each of the resonators includes a piezoelectric layer; and an interdigital transducer (IDT) having a plurality of interleaved fingers at a surface of the piezoelectric layer. The piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer. The filter includes a capacitor connected between ground and a node between the first bulk acoustic resonator and the second bulk acoustic resonator.
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公开(公告)号：US20240250661A1
公开(公告)日：2024-07-25
申请号：US18627897
申请日：2024-04-05
发明人： Takashi YAMANE , Hisashi YAMAZAKI
CPC分类号： H03H9/105 , H03H3/02 , H03H9/02031 , H03H9/02157 , H03H9/02228 , H03H9/0523 , H03H9/13 , H03H9/173 , H03H9/176 , H03H2003/021
摘要： An acoustic wave device includes a first substrate, a piezoelectric layer including one main surface facing the first substrate and another main surface facing a direction opposite to the one main surface, a functional electrode on at least one of the one and the other main surfaces, and a second substrate including a first main surface facing the other main surface of the piezoelectric layer, a second main surface facing a direction opposite to the first main surface, and a through-hole penetrating from the first main surface to the second main surface. An angle at which a side surface of the through-hole is inclined from the second main surface toward the first main surface is equal to or more than about 0° and equal to or less than about 5° based on a normal line with respect to the second main surface.
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公开(公告)号：US20240243719A1
公开(公告)日：2024-07-18
申请号：US18622920
申请日：2024-03-30
申请人： QXONIX, INC.
发明人： DARIUSZ BURAK , KEVIN J. GRANNEN , JACK LENELL
CPC分类号： H03H9/02259 , H03H3/02 , H03H9/02015 , H03H9/0207 , H03H9/02102 , H03H9/0211 , H03H9/02157 , H03H9/13 , H03H9/131 , H03H9/17 , H03H9/173 , H03H9/175 , H03H9/205 , H03H9/54 , H03H9/568 , H03H2003/021 , H03H2009/02165
摘要： Techniques for improving acoustic wave devices are disclosed, including filters, oscillators and systems that may include such devices. A first piezoelectric layer having a piezoelectrically excitable resonance mode may be provided. A second piezoelectric layer may also be provided. The first piezoelectric layer and the second piezoelectric layer may have respective thicknesses so that the acoustic wave device has a resonant frequency. A temperature compensating layer may be included. A substrate may be provided.
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公开(公告)号：US12034431B2
公开(公告)日：2024-07-09
申请号：US18083473
申请日：2022-12-17
申请人： Xiang Zheng Tu
发明人： Xiang Zheng Tu
CPC分类号： H03H9/173 , H03H3/0072 , H03H3/02 , H03H9/02031 , H03H9/13 , H03H9/176 , H03H9/2405 , H03H2003/021 , H03H2003/027 , H03H2009/155
摘要： A piezoelectric MEMS resonator is provided. The resonator comprises a single crystal silicon microstructure suspended over a buried cavity created in a silicon substrate and a piezoelectric resonance structure located on the microstructure. The resonator is designed and fabricated based on porous silicon related technologies including selective formation and etching of porous silicon in silicon substrate, porous silicon as scarified material for surface micromachining and porous silicon as substrate for single crystal silicon epitaxial growth. All these porous silicon related technologies are compatible with CMOS technologies and can be conducted in a standard CMOS technologies platform.
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公开(公告)号：US20240186973A1
公开(公告)日：2024-06-06
申请号：US18438772
申请日：2024-02-12
发明人： Guohuang YANG
CPC分类号： H03H3/02 , H03H9/0514 , H03H9/173 , H03H2003/021
摘要： The present disclosure provides a film bulk acoustic resonator and its fabrication method. The fabrication method includes providing a first substrate, and sequentially forming a first electrode layer, a piezoelectric material layer, and a second electrode layer, on the first substrate; forming a support layer on the second electrode layer and forming a cavity with a top opening in the support layer, where the cavity passes through the support layer; providing a second substrate and bonding the second substrate with the support layer; removing the first substrate; and patterning the first electrode layer, the piezoelectric material layer, and the second electrode layer to form a first electrode, a piezoelectric layer, and a second electrode.
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公开(公告)号：US11996820B2
公开(公告)日：2024-05-28
申请号：US17248402
申请日：2021-01-22
发明人： Yansong Yang , Ruochen Lu , Liuqing Gao , Songbin Gong
CPC分类号： H03H9/02228 , H03H3/02 , H03H9/02031 , H03H9/132 , H03H9/173 , H03H9/176 , H03H9/542 , H03H9/562 , H03H9/564 , H03H9/568 , H03H2003/021
摘要： A piezoelectric thin film suspended above a carrier substrate is adapted to propagate an acoustic wave in a Lamb mode excited by a component of an electric field that is oriented in a longitudinal direction along a length of the piezoelectric thin film. A first signal electrode is located on the piezoelectric thin film and oriented in a transverse direction perpendicular to the longitudinal direction. A first ground electrode is located on the piezoelectric thin film and oriented in the transverse direction. The first ground electrode is separated from the first signal electrode by a gap in which the acoustic wave resonates. A first release window and a second release window are located at a first end and a second end of the piezoelectric thin film, respectively. Intermittent release windows are located beyond distal ends of the first signal electrode and the first ground electrode.
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公开(公告)号：US20240146281A1
公开(公告)日：2024-05-02
申请号：US18527326
申请日：2023-12-03
申请人： Qxonix Inc.
发明人： DARIUSZ BURAK , KEVIN J. GRANNEN , JACK LENELL
CPC分类号： H03H9/02259 , H03H3/02 , H03H9/02015 , H03H9/0207 , H03H9/02102 , H03H9/0211 , H03H9/02157 , H03H9/13 , H03H9/131 , H03H9/17 , H03H9/173 , H03H9/175 , H03H9/205 , H03H9/54 , H03H9/568 , H03H2003/021 , H03H2009/02165
摘要： Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a patterned layer.
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公开(公告)号：US20240136998A1
公开(公告)日：2024-04-25
申请号：US18527327
申请日：2023-12-03
申请人： Qxonix Inc.
发明人： Dariusz Burak , Kevin J. Grannen , Jack Lenell
CPC分类号： H03H9/02259 , H03H3/02 , H03H9/02015 , H03H9/0207 , H03H9/02102 , H03H9/0211 , H03H9/02157 , H03H9/13 , H03H9/131 , H03H9/17 , H03H9/173 , H03H9/175 , H03H9/205 , H03H9/54 , H03H9/568 , H03H2003/021 , H03H2009/02165
摘要： Techniques for improving Bulk Acoustic Wave (BAW) mass loading of resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a mass load layer to facilitate a preselected frequency compensation in the resonant frequency.
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公开(公告)号：US20240106411A1
公开(公告)日：2024-03-28
申请号：US18527328
申请日：2023-12-03
申请人： Qxonix Inc.
发明人： Dariusz Burak , Kevin J. Grannen , Jack Lenell
CPC分类号： H03H9/02259 , H03H3/02 , H03H9/02015 , H03H9/0207 , H03H9/02102 , H03H9/0211 , H03H9/02157 , H03H9/13 , H03H9/131 , H03H9/17 , H03H9/173 , H03H9/175 , H03H9/205 , H03H9/54 , H03H9/568 , H03H2003/021 , H03H2009/02165
摘要： Techniques for improving acoustic wave device structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. The first and second layers of piezoelectric material have respective thicknesses so that the acoustic wave device has a resonant frequency that is in a super high frequency band or an extremely high frequency band.
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公开(公告)号：US20240088869A1
公开(公告)日：2024-03-14
申请号：US18274236
申请日：2021-10-31
发明人： Guoqiang LI , Tielin ZHANG , Hongbin LIU , Xinyan YI , Lishuai ZHAO , Peidong OUYANG
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02031 , H03H9/178 , H03H2003/021 , H03H2009/02204
摘要： A frequency-tunable film bulk acoustic resonator and a preparation method therefor are provided. The resonator includes a substrate, an air gap, a sandwiched structure formed by electrodes and piezoelectric layers, and an electrode lead-out layer, wherein the substrate is connected to the sandwiched structure formed by the electrodes and the piezoelectric layers, and a connection face of the substrate and the sandwiched structure formed by the electrodes and the piezoelectric layers is recessed towards inside of the substrate to form the air gap; and the electrode lead-out layer is connected to the sandwiched structure formed by the electrodes and the piezoelectric layers. The sandwiched structure formed by the electrodes and the piezoelectric layers includes a bottom electrode, piezoelectric layers, intermediate electrodes, and a top electrode, wherein the electrodes and the piezoelectric layers are alternately arranged to form the sandwiched structure.
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