公开(公告)号：US06499492B1

公开(公告)日：2002-12-31

申请号：US09633893

申请日：2000-08-07

申请人： Sung-bum Cho ,  Hak-pil Kim ,  Eun-hee Shin ,  Baik-soon Choi

发明人： Sung-bum Cho ,  Hak-pil Kim ,  Eun-hee Shin ,  Baik-soon Choi

IPC分类号： B08B900

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  Y10S438/905

摘要： A plasma process apparatus having a plasma chamber with in situ monitoring, a monitoring method, and a method for in situ cleaning a plasma chamber. The apparatus includes a sampling manifold which induces flow of a sample gas from a plasma chamber through the manifold. A gas analyzer analyzes the sample gas flowing through the sampling manifold. The in situ monitoring method monitors an initial gas to establish background levels, and bakes the apparatus to reduce contaminants, if necessary. The monitoring method then monitors a process reaction and, after unloading a wafer and discharging a waste gas, monitors an in situ cleaning reaction. Monitoring involves inducing flow of a gas from the plasma chamber through the sampling manifold, and then analyzing the gas in the manifold with a gas analyzer. The cleaning method includes using a mixture of sulfur hexafluoride and chlorine to clean the plasma chamber after etching a polysilicon layer.

摘要翻译： 一种具有等离子体室的等离子体处理装置，其具有原位监测，监测方法和用于原位清洗等离子体室的方法。 该装置包括采样歧管，其引导来自等离子体室的样品气体流过歧管。 气体分析仪分析流过采样歧管的样品气体。 原位监测方法监测初始气体以建立背景水平，并且如有必要，烘烤设备以减少污染物。 然后监测方法监测过程反应，并且在卸载晶片并排出废气之后，监测原位清洁反应。 监测涉及通过采样歧管引导来自等离子体室的气体流，然后用气体分析仪分析歧管中的气体。 清洗方法包括在蚀刻多晶硅层之后使用六氟化硫和氯的混合物来清洁等离子体室。

公开(公告)号：US6146492A

公开(公告)日：2000-11-14

申请号：US172140

申请日：1998-10-14

申请人： Sung-bum Cho ,  Hak-pil Kim ,  Eun-hee Shin ,  Baik-soon Choi

发明人： Sung-bum Cho ,  Hak-pil Kim ,  Eun-hee Shin ,  Baik-soon Choi

IPC分类号： H05H1/00 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46 ,  C23C16/00

CPC分类号： H01J37/32935 ,  H01J37/32963 ,  Y10S438/905

摘要： A plasma process apparatus having a plasma chamber with in situ monitoring, a monitoring method, and a method for in situ cleaning a plasma chamber. The apparatus includes a sampling manifold which induces flow of a sample gas from a plasma chamber through the manifold. A gas analyzer analyzes the sample gas flowing through the sampling manifold. The in situ monitoring method monitors an initial gas to establish background levels, and bakes the apparatus to reduce contaminants, if necessary. The monitoring method then monitors a process reaction and, after unloading a wafer and discharging a waste gas, monitors an in situ cleaning reaction. Monitoring involves inducing flow of a gas from the plasma chamber through the sampling manifold, and then analyzing the gas in the manifold with a gas analyzer. The cleaning method includes using a mixture of sulfur hexafluoride and chlorine to clean the plasma chamber after etching a polysilicon layer.

摘要翻译： 一种具有等离子体室的等离子体处理装置，其具有原位监测，监测方法和用于原位清洗等离子体室的方法。 该装置包括采样歧管，其引导来自等离子体室的样品气体流过歧管。 气体分析仪分析流过采样歧管的样品气体。 原位监测方法监测初始气体以建立背景水平，并且如有必要，烘烤设备以减少污染物。 然后监测方法监测过程反应，并且在卸载晶片并排出废气之后，监测原位清洁反应。 监测涉及通过采样歧管引导来自等离子体室的气体流，然后用气体分析仪分析歧管中的气体。 清洗方法包括在蚀刻多晶硅层之后使用六氟化硫和氯的混合物来清洁等离子体室。