Substrate processing method and film forming method
    2.
    发明申请
    Substrate processing method and film forming method 有权
    基板加工方法和成膜方法

    公开(公告)号:US20090197352A1

    公开(公告)日:2009-08-06

    申请号:US12382343

    申请日:2009-03-13

    IPC分类号: H01L21/66

    摘要: A substrate processing method in a processing chamber, has: accommodating a substrate into a processing chamber; and processing the substrate in the processing chamber on the basis of a correlation of a preset temperature of a heating device, a flow rate of fluid supplied by a cooling device and a temperature deviation between the center side of the substrate accommodated in the processing chamber and the outer peripheral side of the substrate while the substrate accommodated in the processing chamber is optically heated from an outer periphery side of the substrate at a corrected preset temperature by the heating device and the fluid is supplied to the outside of the processing chamber at the flow rate based on the correlation concerned to cool the outer peripheral side of the substrate by the cooling device.

    摘要翻译: 处理室中的基板处理方法具有:将基板容纳到处理室中; 基于加热装置的预设温度,由冷却装置供应的流体的流量与容纳在处理室中的基板的中心侧之间的温度偏差的相关性来处理处理室中的基板;以及 通过加热装置,在校正的预设温度下从衬底的外周侧对容纳在处理室中的衬底进行光学加热的衬底的外周侧,并且流体以流动被供给到处理室的外部 基于相关关系,通过冷却装置冷却基板的外周侧。

    Substrate Processing Apparatus and Substrate Processing Method
    3.
    发明申请
    Substrate Processing Apparatus and Substrate Processing Method 有权
    基板加工装置及基板加工方法

    公开(公告)号:US20090029486A1

    公开(公告)日:2009-01-29

    申请号:US12087479

    申请日:2007-02-21

    IPC分类号: H01L21/66 B05C11/00

    摘要: A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.

    摘要翻译: 基板处理装置具有:处理基板的处理室; 加热装置,其从基板的外周侧光学加热容纳在处理室中的基板; 冷却装置,其通过使由加热装置光学加热的基板的外周附近的流体流动来冷却基板的外周侧; 温度检测部,其检测处理室内的温度; 以及加热控制部,其以这样的方式控制加热装置和冷却装置,以在基板的中心部分和基板的端部之间提供温度差,同时将中心部分处的温度保持在预先 根据由温度检测部分检测的温度确定温度。

    Substrate processing apparatus and substrate processing method
    4.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号:US08501599B2

    公开(公告)日:2013-08-06

    申请号:US12087479

    申请日:2007-02-21

    摘要: A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.

    摘要翻译: 基板处理装置具有:处理基板的处理室; 加热装置,其从基板的外周侧光学加热容纳在处理室中的基板; 冷却装置,其通过使由加热装置光学加热的基板的外周附近的流体流动来冷却基板的外周侧; 温度检测部,其检测处理室内的温度; 以及加热控制部,其以这样的方式控制加热装置和冷却装置,以在基板的中心部分和基板的端部之间提供温度差,同时将中心部分处的温度保持在预先 根据由温度检测部分检测的温度确定温度。