公开(公告)号：US5285067A

公开(公告)日：1994-02-08

申请号：US846633

申请日：1992-03-05

申请人： James C. Culbertson ,  Harvey S. Newman ,  Jeffrey M. Pond ,  Stuart A. Wolf ,  Ulrich Strom

发明人： James C. Culbertson ,  Harvey S. Newman ,  Jeffrey M. Pond ,  Stuart A. Wolf ,  Ulrich Strom

IPC分类号： G01J5/10 ,  H01L39/14 ,  H01L39/00

CPC分类号： H01L39/143 ,  G01J5/10 ,  Y10S505/849 ,  Y10S505/866

摘要： Highly sensitive infrared detectors can be made from superconducting micrrip transmission lines, having a single ground plane, a dielectric substrate on the ground plane, and a thin film path of superconducting oxide on the substrate. These microstrip transmission lines can be fabricated into resonant or non-resonant structures. The detectors operate by detecting changes in a microwave signal transmitted through the microstrip, measures in the amplitude, frequency or time domains. An embodiment of this invention is an asymmetric ring interferometer, with or without a metal segment in the shorter leg of the interferometer. Another embodiment of this invention is a meander path transmission line, which, in certain configurations, may be used as a single element array with very high resolution in the direction parallel to the meander lines.

摘要翻译： 高灵敏度的红外探测器可以由超导微带传输线制成，具有单个接地平面，接地平面上的电介质基片以及衬底上超导氧化物的薄膜路径。 这些微带传输线可以制成谐振或非谐振结构。 检测器通过检测通过微带传输的微波信号的变化来进行操作，测量幅度，频率或时域。 本发明的一个实施例是一种不对称环形干涉仪，其具有或不具有在干涉仪的较短支路中的金属段。 本发明的另一实施例是曲折路径传输线，其在某些配置中可以被用作在与曲折线平行的方向上具有非常高的分辨率的单个元件阵列。

公开(公告)号：US20090302352A1

公开(公告)日：2009-12-10

申请号：US12476298

申请日：2009-06-02

申请人： Richard Magno ,  Mario Ancona ,  John Bradley Boos ,  James G. Champlain ,  Harvey S. Newman

发明人： Richard Magno ,  Mario Ancona ,  John Bradley Boos ,  James G. Champlain ,  Harvey S. Newman

IPC分类号： H01L29/207 ,  H01L21/203

CPC分类号： H01L29/205 ,  H01L21/02398 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02631 ,  H01L29/201 ,  H01L29/207 ,  H01L29/861

摘要： This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.

摘要翻译： 本公开描述了一种半导体器件，其可以用作从几十GHz到THz频率范围的RF频率的混频器。 该器件由固体源分子束外延生长的窄带隙半导体组成。 该器件可以包括GaSb衬底，GaSb衬底上的AlSb层，AlSb层上的In0.69Al0.31As0.41Sb0.59层，其中In0.69Al0.31As0.41Sb0.59包含不同水平的Te掺杂 ，In0.69Al0.31As0.41 Sb0.59层的In0.27Ga0.73Sb层，其中In0.27Ga0.73Sb层被掺杂，其中In0.69Al0.31As0.41Sb0.59层的第一段 已掺杂Te，其中In0.69Al0.31As0.41Sb0.59层的第二段具有Te浓度的等级，其中In0.69Al0.31As0.41Sb0.59层的第三段为Te掺杂。

公开(公告)号：US5086329A

公开(公告)日：1992-02-04

申请号：US558540

申请日：1990-07-27

申请人： Harvey S. Newman

发明人： Harvey S. Newman

IPC分类号： H01L29/15 ,  H01P1/15

CPC分类号： H01L29/157 ,  H01P1/15

摘要： A microwave switch is provided for controlling the transmission of microw energy in a microstrip transmission line structure. The microwave switch comprises an electrically conducting ground plane in contact with one side of an undoped semiconductor material having on its other side a superlattice of gallium arsenide consisting of a periodic sequence of p- and n-doped gallium arsenide layers. P- and n-type regions are formed integral with and electrically connected to the superlattice, and first and second microstrip transmission lines are electrically connected to respective ones of the n- and p-type regions.

摘要翻译： 提供微波开关用于控制微带传输线结构中微波能量的传输。 微波开关包括与未掺杂半导体材料的一侧接触的导电接地平面，其另一侧具有由p型和n型掺杂砷化镓层的周期性序列组成的砷化镓超晶格。 P型和n型区与超晶格形成一体并电连接，并且第一和第二微带传输线与n型和p型区中的相应电极电连接。

公开(公告)号：US08076700B2

公开(公告)日：2011-12-13

申请号：US12476298

申请日：2009-06-02

申请人： Richard Magno ,  Mario Ancona ,  John Bradley Boos ,  James G Champlain ,  Harvey S Newman

发明人： Richard Magno ,  Mario Ancona ,  John Bradley Boos ,  James G Champlain ,  Harvey S Newman

IPC分类号： H01L29/207 ,  H01L21/203

CPC分类号： H01L29/205 ,  H01L21/02398 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02631 ,  H01L29/201 ,  H01L29/207 ,  H01L29/861

摘要： This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.

摘要翻译： 本公开描述了一种半导体器件，其可以用作从几十GHz到THz频率范围的RF频率的混频器。 该器件由固体源分子束外延生长的窄带隙半导体组成。 该器件可以包括GaSb衬底，GaSb衬底上的AlSb层，AlSb层上的In0.69Al0.31As0.41Sb0.59层，其中In0.69Al0.31As0.41Sb0.59包含不同水平的Te掺杂 ，In0.69Al0.31As0.41 Sb0.59层的In0.27Ga0.73Sb层，其中In0.27Ga0.73Sb层被掺杂，其中In0.69Al0.31As0.41Sb0.59层的第一段 已掺杂Te，其中In0.69Al0.31As0.41Sb0.59层的第二段具有Te浓度的等级，其中In0.69Al0.31As0.41Sb0.59层的第三段为Te掺杂。