公开(公告)号：US20090302352A1

公开(公告)日：2009-12-10

申请号：US12476298

申请日：2009-06-02

申请人： Richard Magno ,  Mario Ancona ,  John Bradley Boos ,  James G. Champlain ,  Harvey S. Newman

发明人： Richard Magno ,  Mario Ancona ,  John Bradley Boos ,  James G. Champlain ,  Harvey S. Newman

IPC分类号： H01L29/207 ,  H01L21/203

CPC分类号： H01L29/205 ,  H01L21/02398 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02631 ,  H01L29/201 ,  H01L29/207 ,  H01L29/861

摘要： This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.

摘要翻译： 本公开描述了一种半导体器件，其可以用作从几十GHz到THz频率范围的RF频率的混频器。 该器件由固体源分子束外延生长的窄带隙半导体组成。 该器件可以包括GaSb衬底，GaSb衬底上的AlSb层，AlSb层上的In0.69Al0.31As0.41Sb0.59层，其中In0.69Al0.31As0.41Sb0.59包含不同水平的Te掺杂 ，In0.69Al0.31As0.41 Sb0.59层的In0.27Ga0.73Sb层，其中In0.27Ga0.73Sb层被掺杂，其中In0.69Al0.31As0.41Sb0.59层的第一段 已掺杂Te，其中In0.69Al0.31As0.41Sb0.59层的第二段具有Te浓度的等级，其中In0.69Al0.31As0.41Sb0.59层的第三段为Te掺杂。

公开(公告)号：US08076700B2

公开(公告)日：2011-12-13

申请号：US12476298

申请日：2009-06-02

申请人： Richard Magno ,  Mario Ancona ,  John Bradley Boos ,  James G Champlain ,  Harvey S Newman

发明人： Richard Magno ,  Mario Ancona ,  John Bradley Boos ,  James G Champlain ,  Harvey S Newman

IPC分类号： H01L29/207 ,  H01L21/203

CPC分类号： H01L29/205 ,  H01L21/02398 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02631 ,  H01L29/201 ,  H01L29/207 ,  H01L29/861

摘要： This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.

摘要翻译： 本公开描述了一种半导体器件，其可以用作从几十GHz到THz频率范围的RF频率的混频器。 该器件由固体源分子束外延生长的窄带隙半导体组成。 该器件可以包括GaSb衬底，GaSb衬底上的AlSb层，AlSb层上的In0.69Al0.31As0.41Sb0.59层，其中In0.69Al0.31As0.41Sb0.59包含不同水平的Te掺杂 ，In0.69Al0.31As0.41 Sb0.59层的In0.27Ga0.73Sb层，其中In0.27Ga0.73Sb层被掺杂，其中In0.69Al0.31As0.41Sb0.59层的第一段 已掺杂Te，其中In0.69Al0.31As0.41Sb0.59层的第二段具有Te浓度的等级，其中In0.69Al0.31As0.41Sb0.59层的第三段为Te掺杂。

公开(公告)号：US07388235B2

公开(公告)日：2008-06-17

申请号：US11239431

申请日：2005-09-20

申请人： John Bradley Boos ,  Brian R Bennett ,  Richard Magno ,  Nicholas A Papanicolou ,  Brad P. Tinkham

发明人： John Bradley Boos ,  Brian R Bennett ,  Richard Magno ,  Nicholas A Papanicolou ,  Brad P. Tinkham

IPC分类号： H01L29/739 ,  H01L31/00

CPC分类号： H01L29/7783

摘要： This invention pertains to an electronic device containing a semi-insulating substrate, a buffer layer of an antimony-based material disposed on said substrate, a channel layer of InAsySb1-y material disposed on said buffer layer, a barrier layer of an antimony-based disposed on said channel layer, and a cap layer of InAsySb1-y material disposed on said barrier layer, wherein the device can have frequency of on the order of 500 GHz and a reduced power dissipation.

摘要翻译： 本发明涉及一种电子器件，其包含半绝缘衬底，设置在所述衬底上的锑基材料的缓冲层，InAs Sb 3 Sb 1-y的沟道层， 设置在所述缓冲层上的SUB>材料，设置在所述沟道层上的锑基阻挡层，以及设置在所述缓冲层上的InAsSb 1-y材料的覆盖层 在所述阻挡层上，其中所述器件可以具有大约500GHz的频率和降低的功率耗散。

公开(公告)号：US07635879B2

公开(公告)日：2009-12-22

申请号：US11239438

申请日：2005-09-20

申请人： John Bradley Boos ,  Brian R. Bennett ,  Paul Campbell ,  Richard Magno

发明人： John Bradley Boos ,  Brian R. Bennett ,  Paul Campbell ,  Richard Magno

IPC分类号： H01L29/40

CPC分类号： H01L29/201 ,  H01L29/205 ,  H01L29/7371

摘要： This invention pertains to heterojunction bipolar transistors containing a semiconductor substrate, a buffer layer of an antimony-based material deposited on the substrate, a sub-collector layer of an antimony-based material deposited on the buffer layer, a collector layer of an antimony-based material deposited on the sub-collector layer, a base layer of an antimony-based material deposited on the collector layer, an emitter layer of an antimony-based material deposited on the base layer, and a cap layer of an antimony-based material deposited on the emitter layer.

摘要翻译： 本发明涉及含有半导体衬底的异质结双极晶体管，沉积在衬底上的锑基材料的缓冲层，沉积在缓冲层上的锑基材料的副集电极层，锑 - 沉积在集电极层上的锑基材料的基底层，沉积在基底层上的锑基材料的发射极层和锑基材料的覆盖层， 沉积在发射极层上。

公开(公告)号：US20060065952A1

公开(公告)日：2006-03-30

申请号：US11239438

申请日：2005-09-20

申请人： John Boos ,  Brian Bennett ,  Paul Campbell ,  Richard Magno

发明人： John Boos ,  Brian Bennett ,  Paul Campbell ,  Richard Magno

IPC分类号： H01L27/082 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

CPC分类号： H01L29/201 ,  H01L29/205 ,  H01L29/7371

摘要： This invention pertains to heterojunction bipolar transistors containing a semiconductor substrate, a buffer layer of an antimony-based material deposited on the substrate, a sub-collector layer of an antimony-based material deposited on the buffer layer, a collector layer of an antimony-based material deposited on the sub-collector layer, a base layer of an antimony-based material deposited on the collector layer, an emitter layer of an antimony-based material deposited on the base layer, and a cap layer of an antimony-based material deposited on the emitter layer.

公开(公告)号：US20060076577A1

公开(公告)日：2006-04-13

申请号：US11239431

申请日：2005-09-20

申请人： John Boos ,  Brian Bennett ,  Richard Magno ,  Brad Tinkham ,  Nicholas Papanicolou

发明人： John Boos ,  Brian Bennett ,  Richard Magno ,  Brad Tinkham ,  Nicholas Papanicolou

IPC分类号： H01L29/739

CPC分类号： H01L29/7783

摘要： This invention pertains to an electronic device containing a semi-insulating substrate, a buffer layer of an antimony-based material disposed on said substrate, a channel layer of InAsySb1−y material disposed on said buffer layer, a barrier layer of an antimony-based disposed on said channel layer, and a cap layer of InAsySb1−y material disposed on said barrier layer, wherein the device can have frequency of on the order of 500 GHz and a reduced power dissipation.

摘要翻译： 本发明涉及一种电子器件，其包含半绝缘衬底，设置在所述衬底上的锑基材料的缓冲层，InAs Sb 3 Sb 1-y的沟道层， 设置在所述缓冲层上的SUB>材料，设置在所述沟道层上的锑基阻挡层，以及设置在所述缓冲层上的InAsSb 1-y材料的覆盖层 在所述阻挡层上，其中所述器件可以具有大约500GHz的频率和降低的功率耗散。

公开(公告)号：US06316965B1

公开(公告)日：2001-11-13

申请号：US09593809

申请日：2000-06-15

申请人： Berend T. Jonker ,  Richard Magno

发明人： Berend T. Jonker ,  Richard Magno

IPC分类号： H03K1910

CPC分类号： B82Y10/00 ,  H03K3/315 ,  H03K19/10

摘要： A circuit includes at least one negative differential resistance (NDR) device and at least one magnetic device having reversibly variable resistance, wherein the negative differential resistance device and the magnetic device are operatively connected so that changing the resistance of the magnetic device changes the current-voltage response characteristics of the circuit. NDR devices and magnetic devices can be arranged to form multiple value logic (MVL) cells and monostable-bistable transition logic elements (MOBILE), and these logic cells can form the components of a field programmable gate array.

摘要翻译： 电路包括至少一个负差分电阻（NDR）装置和至少一个具有可逆电阻的磁性装置，其中负差动电阻装置和磁性装置可操作地连接，使得磁性装置的电阻改变电流 - 电路的电压响应特性。 NDR器件和磁性器件可以被布置成形成多值逻辑（MVL）单元和单稳态双稳态转换逻辑元件（MOBILE），并且这些逻辑单元可以形成现场可编程门阵列的组件。