Semiconductor device having a fuse layer
    1.
    发明授权
    Semiconductor device having a fuse layer 失效
    具有熔丝层的半导体器件

    公开(公告)号:US5872389A

    公开(公告)日:1999-02-16

    申请号:US672867

    申请日:1996-06-28

    CPC分类号: H01L23/5258 H01L2924/0002

    摘要: Burst pressure P of an insulating layer positioned immediately on a fuse layer is defined by using planar width W of fuse layer and thickness t of insulating layer. The value of the planar width W of fuse layer and the value of the thickness t of insulating layer are set such that the value of burst pressure P is at most about 1000 kg/cm.sup.2. The value of the thickness t and the value of the planar width W are set such that the value t/W is at least 0.45 and at most 0.91. Consequently, stable fuse blowing becomes possible while reducing manufacturing cost.

    摘要翻译: 通过使用熔丝层的平面宽度W和绝缘层的厚度t来定义紧靠在熔丝层上的绝缘层的爆破压力P. 熔丝层的平面宽度W的值和绝缘层的厚度t的值被设定为使得爆破压力P的值为至多约1000kg / cm 2。 厚度t的值和平面宽度W的值被设定为使得值t / W为至少0.45且至多为0.91。 因此,可以在降低制造成本的同时实现稳定的熔断器熔断。