公开(公告)号：US5486449A

公开(公告)日：1996-01-23

申请号：US935345

申请日：1992-08-28

申请人： Hitoshi Hosono ,  Satoru Takasugi

发明人： Hitoshi Hosono ,  Satoru Takasugi

IPC分类号： G03F1/00 ,  G03F7/09 ,  G03F7/20 ,  G03F7/38 ,  G03F5/24

CPC分类号： G03F7/38 ,  G03F1/50 ,  G03F7/2022 ,  G03F7/091

摘要： A method for making a three dimensional structure of the aperture in a photoresist layer on a semiconductor substrate by differentiating dose of exposure light between parts of a photoresist layer. One example of the three dimensional structure is an overhang-platform structure; that is, one side wall of a narrow aperture has an overhang and the opposite side wall has a platform. By separately forming one photoresist layer segment having the overhang wall and the other photoresist layer segment having the platform wall, the distance between the edges of the overhang and the platform can be made smaller than the resolution limit of the photoresist material, which enables making a path line on a substrate whose width is smaller than the resolution limit. Many types of photoresist layers and photomasks for producing such photoresist layers are disclosed.

摘要翻译： 一种通过在光致抗蚀剂层的各部分之间分辨曝光光的剂量来在半导体衬底上的光致抗蚀剂层中形成孔的三维结构的方法。 三维结构的一个例子是悬垂平台结构; 也就是说，窄孔的一个侧壁具有悬垂端，并且相对的侧壁具有平台。 通过分别形成具有悬垂壁的一个光致抗蚀剂层段和具有平台壁的另一个光致抗蚀剂层段，可以使悬垂边缘和平台之间的距离小于光致抗蚀剂材料的分辨率极限，这使得能够 宽度小于分辨率极限的基板上的路径线。 公开了用于制造这种光致抗蚀剂层的许多类型的光致抗蚀剂层和光掩模。