公开(公告)号：US20240295817A1

公开(公告)日：2024-09-05

申请号：US18568264

申请日：2022-06-07

申请人： SHANGHAI MICROSTART PHOTOELECTRIC TECHNOLOGY CO., LTD.

发明人： Yijiao GAO

IPC分类号： G03F7/095 ,  G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC分类号： G03F7/095 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/2022 ,  G03F7/322 ,  G03F7/70383

摘要： The present disclosure pertains to a photolithography method based on bilayer photoresist, the method including applying one layer of positive photoresist on a substrate and drying, then applying one layer of negative photoresist on the positive photoresist and drying; exposing the two layers of photoresist using a photolithography mask with mask patterns or through focused direct write under a source of exposure, and then drying; developing, with developer for negative photoresist, the negative photoresist; controllably developing, with developer for positive photoresist, the positive photoresist; forming patterns on the material of the substrate through material deposition technology or etching technology; removing the photoresist. Compared with existing single-exposure photolithography technology, the method of the present disclosure is simple and a line width smaller than that of the conventional technology can be achieved by pattern contouring. The method can be widely used in semiconductor process and has extensive values of research and application.

公开(公告)号：US20240192599A1

公开(公告)日：2024-06-13

申请号：US18554774

申请日：2021-04-15

申请人： Hewlett-Packard Development Company, L.P.

发明人： Bo Song ,  Chien-Hua Chen ,  Michael G. Groh

IPC分类号： G03F7/075 ,  B41J2/16 ,  C08L83/06 ,  G03F7/00 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20

CPC分类号： G03F7/0757 ,  B41J2/1606 ,  B41J2/1631 ,  B41J2/1645 ,  C08L83/06 ,  G03F7/0035 ,  G03F7/0385 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/2022

摘要： A photo-definable hydrophobic composition (“composition”) is presented. The composition can include from about 0.01 wt % to about 20 wt % of a polyether modified siloxane and from about 80 wt % to about 99.99 wt % of a polymeric photoresist. The polymeric photoresist can be selected from an epoxy-based photoresist, a bisbenzocyclobutene-based photoresist, a polyimide-based photoresist, a polybenzoxazole-based photoresist, a polyimide-polybenzoxazole-based photoresist, an admixture, or a combination thereof.

公开(公告)号：US20240126174A1

公开(公告)日：2024-04-18

申请号：US18398152

申请日：2023-12-28

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Meng-Che Tu ,  Po-Han Wang ,  Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/768

CPC分类号： G03F7/2022 ,  H01L21/0274 ,  H01L21/76802 ,  G03F7/039

摘要： A method includes the following steps. A photoresist is exposed to a first light-exposure through a first mask, wherein the first mask includes a first stitching region, and a first portion of the photoresist corresponding to a first opaque portion of the first stitching region is unexposed. The photoresist is exposed to a second light-exposure through a second mask, wherein the second mask includes a second stitching region, and a second portion of the photoresist corresponding to a second opaque portion of the second stitching region is unexposed and is overlapping with the first portion of the photoresist.

公开(公告)号：US11927879B2

公开(公告)日：2024-03-12

申请号：US17407642

申请日：2021-08-20

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Moosong Lee ,  Seung Yoon Lee ,  Jeongjin Lee

IPC分类号： G03F1/22 ,  G03F1/24 ,  G03F1/42 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F1/22 ,  G03F1/24 ,  G03F1/42 ,  G03F7/2004 ,  G03F7/2022 ,  G03F9/7003 ,  G03F9/7084

摘要： A method includes forming a first photomask including N mask chip regions and a first mask scribe lane region surrounding each of the N mask chip regions, forming a second photomask including M mask chip regions and a second mask scribe lane region surrounding each of the M mask chip regions, performing a first semiconductor process including a first photolithography process using the first photomask on a semiconductor wafer; and performing a second semiconductor process including a second photolithography process using the second photomask on the semiconductor wafer. The first photolithography process is an extreme ultraviolet (EUV) photolithography process, the first photomask is an EUV photomask, N is a natural number of 2 or more, and M is two times N.

公开(公告)号：US11884784B2

公开(公告)日：2024-01-30

申请号：US17320524

申请日：2021-05-14

申请人： North Carolina State University

发明人： Reza Arman Ghiladi ,  Dimitris Argyropoulos ,  Frank Scholle

IPC分类号： C08J3/21 ,  C09D11/328 ,  G03F7/004 ,  G03F7/20 ,  C08K3/22 ,  C08K5/56 ,  C09D11/38

CPC分类号： C08J3/212 ,  C08K3/22 ,  C08K5/56 ,  C09D11/328 ,  C09D11/38 ,  G03F7/004 ,  G03F7/2022 ,  C08J2301/02 ,  C08K2003/2227

摘要： Provided herein are photodynamic compositions that can contain a natural polymer scaffold and a photosensitizer, where the photosensitizer can be covalently or non-covalently attached to the natural polymer scaffold. Also provided herein are structures and objects that can contain the photodynamic compositions. Further provided herein are methods of making and using the photodynamic compositions. Finally provided herein are printing ink formulations.

公开(公告)号：US20230268224A1

公开(公告)日：2023-08-24

申请号：US18309131

申请日：2023-04-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Jen Lo ,  Po-Cheng Shih ,  Syun-Ming Jang ,  Tze-Liang Lee

IPC分类号： H01L21/768 ,  H01L21/027 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039

CPC分类号： H01L21/76823 ,  H01L21/76802 ,  H01L21/0274 ,  G03F7/2022 ,  G03F7/038 ,  G03F7/039 ,  G03F7/2004 ,  H01L21/76877

摘要： A representative method includes forming a photo-sensitive material over a substrate, and forming a cap layer over the photo-sensitive material, and patterning the cap layer. Using the patterned cap layer, a first portion of the photo-sensitive material is selectively exposed to a pre-selected light wavelength to change at least one material property of the first portion of the photo-sensitive material, while preventing a second portion of the photo-sensitive material from being exposed to the pre-selected light wavelength. One, but not both of the following steps is then conducted: removing the first portion of the photo-sensitive material and forming in its place a conductive element at least partially surrounded by the second portion of the photo-sensitive material, or removing the second portion of the photo-sensitive material and forming from the first portion of the photo-sensitive material a conductive element electrically connecting two or more portions of a circuit.

公开(公告)号：US11693320B2

公开(公告)日：2023-07-04

申请号：US16631084

申请日：2018-09-20

申请人： The Institute of Optics and Electronics, The Chinese Academy of Sciences

发明人： Xiangang Luo ,  Changtao Wang ,  Yanqin Wang ,  Weijie Kong ,  Ping Gao ,  Zeyu Zhao

IPC分类号： G03F7/20 ,  G03F7/30

CPC分类号： G03F7/2022 ,  G03F7/30

摘要： The present disclosure provides a secondary imaging optical lithography method and apparatus. The method includes: contacting a lithography mask plate with a flexible transparent transfer substrate closely, the flexible transparent transfer substrate comprising a first near-field imaging structure having a photosensitive layer; irradiating the photosensitive layer through the lithography mask plate with a first light source, so as to transfer a pattern of the lithography mask plate to the photosensitive layer; coating a device substrate for fabricating devices with a photoresist; contacting the flexible transparent transfer substrate with the photoresist-coated device substrate closely; irradiating the device substrate through the flexible transparent transfer substrate with a second light source, so as to transfer a pattern of the photosensitive layer to the photoresist of the device substrate; and developing the device substrate comprising an exposed photoresist, so as to obtain a device pattern conforming to the pattern of the lithography mask plate.

公开(公告)号：US20190187556A1

公开(公告)日：2019-06-20

申请号：US16221030

申请日：2018-12-14

申请人： Tokyo Electron Limited

发明人： Wanjae Park ,  Lior Huli ,  Soo Doo Chae

IPC分类号： G03F7/00 ,  G03F7/20 ,  H01L21/027

CPC分类号： G03F7/0002 ,  G03F7/2022 ,  G03F7/70033 ,  H01L21/0276

摘要： Embodiments of methods for patterning using enhancement of surface adhesion are presented. In an embodiment, a method for patterning using enhancement of surface adhesion may include providing an input substrate with an anti-reflective coating layer and an underlying layer. Such a method may also include performing a surface adhesion modification process on the substrate, the surface adhesion modification process utilizing a plasma treatment configured to increase an adhesion property of an anti-reflective coating layer without affecting downstream processes. In an embodiment, the method may also include performing a photoresist coating process, a mask exposure process, and a developing process to generate a target patterned structure in a photoresist layer on the substrate. In such embodiments, the method may include controlling operating parameters of the surface adhesion modification process to achieve target profiles of the patterned structure and substrate throughput objectives.

公开(公告)号：US20190113849A1

公开(公告)日：2019-04-18

申请号：US16208662

申请日：2018-12-04

申请人： Carl Zeiss SMT GmbH

发明人： Markus Deguenther ,  Stig Bieling

IPC分类号： G03F7/20

CPC分类号： G03F7/7015 ,  G02B6/0015 ,  G02B6/0068 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/70075 ,  G03F7/7045

摘要： A microlithographic illumination unit for post-exposure of a photoresist provided on a wafer in a microlithography process, has at least one light source and a light-guiding and light-mixing element for coupling the electromagnetic radiation generated by the light source into the photoresist. This light-guiding and light-mixing element has a first pair of mutually opposite side faces, the maximum spacing of which has a first value. Multiple reflections of the electromagnetic radiation on these side faces take place, wherein the light-guiding and light-mixing element has a second pair of mutually opposite side faces, the maximum spacing of which has a second value. The maximum extent of the light-guiding and light-mixing element in the light propagation direction of the electromagnetic radiation has a third value. This third value is greater than the first value and is smaller than the second value.

公开(公告)号：US20190027686A1

公开(公告)日：2019-01-24

申请号：US15864472

申请日：2018-01-08

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Youngdae KIM ,  Sangjin PARK ,  Minjae JEONG

IPC分类号： H01L51/00 ,  H01L51/56 ,  G03F7/039 ,  G03F7/038 ,  G03F7/213 ,  G03F7/26 ,  G03F7/09 ,  G03F7/095 ,  G03F7/20

CPC分类号： H01L51/0011 ,  C23C14/042 ,  G03F7/038 ,  G03F7/039 ,  G03F7/094 ,  G03F7/095 ,  G03F7/0957 ,  G03F7/12 ,  G03F7/2022 ,  G03F7/213 ,  G03F7/26 ,  H01L51/56

摘要： A method of manufacturing a mask includes attaching a first mask base substrate and a second mask base substrate to opposite sides of an adhesive layer, forming a photoresist layer on the first and second mask base substrates, exposing and developing the photoresist layer to remove the photoresist layer on effective area at centers of surfaces of the first and second mask base substrates such that the first photoresist layer remains on non-effective areas at edges of surfaces of the first mask base substrate and the second mask base substrate, etching the effective area to form a stepped groove on the first and second mask base substrates, separating the first and second mask base substrates from the adhesive layer, and forming a pattern hole in the effective area of first and second mask base substrates, each with the first stepped groove thereon.