公开(公告)号：US20100164009A1

公开(公告)日：2010-07-01

申请号：US12654337

申请日：2009-12-17

申请人： Hong-bae Park ,  Hag-ju Cho ,  Sug-hun Hong ,  Sang-jin Hyun ,  Hoon-joo Nah ,  Hyung-seok Hong

发明人： Hong-bae Park ,  Hag-ju Cho ,  Sug-hun Hong ,  Sang-jin Hyun ,  Hoon-joo Nah ,  Hyung-seok Hong

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L27/088

CPC分类号： H01L21/823842 ,  H01L21/82385

摘要： The method involves providing a semiconductor substrate comprising first and second regions in which different conductive metal-oxide semiconductor (MOS) transistors are to be formed. A gate dielectric layer above the semiconductor substrate sequentially forming a first metallic conductive layer and a second metallic conductive layer on and above the gate dielectric layer; covering the second region with a mask, and performing ion plantation of a first material into the first metallic conductive layer of the first region. Removing the second metallic conductive layer of the first region and forming a first gate electrode of the first region and a second gate electrode of the second region by patterning the gate dielectric layer and the first metallic conductive layer of the first region, and the gate dielectric layer, the first metallic conductive layer, and the second metallic conductive layer of the second region. The first and second regions of the semiconductor substrate having different work functions because the gate electrodes of the first and second regions have different thicknesses and at least one of the first and second gate electrodes include impurities.

摘要翻译： 该方法包括提供包括将要形成不同的导电金属氧化物半导体（MOS）晶体管的第一和第二区域的半导体衬底。 在所述半导体衬底上方的栅极电介质层，其顺序地在所述栅极电介质层上方形成第一金属导电层和第二金属导电层; 用掩模覆盖第二区域，并且将第一材料离子种植到第一区域的第一金属导电层中。 通过图案化第一区域的栅介电层和第一金属导电层，去除第一区域的第二金属导电层并形成第一区域的第一栅极电极和第二区域的第二栅极电极，以及栅极电介质 第一金属导电层和第二区域的第二金属导电层。 由于第一和第二区域的栅电极具有不同的厚度，并且第一和第二栅电极中的至少一个包括杂质，所以具有不同功函数的半导体衬底的第一和第二区域。

公开(公告)号：US08367502B2

公开(公告)日：2013-02-05

申请号：US12654337

申请日：2009-12-17

申请人： Hong-bae Park ,  Hag-ju Cho ,  Sug-hun Hong ,  Sang-jin Hyun ,  Hoon-joo Nah ,  Hyung-seok Hong

发明人： Hong-bae Park ,  Hag-ju Cho ,  Sug-hun Hong ,  Sang-jin Hyun ,  Hoon-joo Nah ,  Hyung-seok Hong

IPC分类号： H01L21/8234

CPC分类号： H01L21/823842 ,  H01L21/82385

摘要： The method involves providing a semiconductor substrate comprising first and second regions in which different conductive metal-oxide semiconductor (MOS) transistors are to be formed. A gate dielectric layer above the semiconductor substrate sequentially forming a first metallic conductive layer and a second metallic conductive layer on and above the gate dielectric layer; covering the second region with a mask, and performing ion plantation of a first material into the first metallic conductive layer of the first region. Removing the second metallic conductive layer of the first region and forming a first gate electrode of the first region and a second gate electrode of the second region by patterning the gate dielectric layer and the first metallic conductive layer of the first region, and the gate dielectric layer, the first metallic conductive layer, and the second metallic conductive layer of the second region. The first and second regions of the semiconductor substrate having different work functions because the gate electrodes of the first and second regions have different thicknesses and at least one of the first and second gate electrodes include impurities.

摘要翻译： 该方法包括提供包括将要形成不同的导电金属氧化物半导体（MOS）晶体管的第一和第二区域的半导体衬底。 在所述半导体衬底上方的栅极电介质层，其顺序地在所述栅极电介质层上方形成第一金属导电层和第二金属导电层; 用掩模覆盖第二区域，并且将第一材料离子种植到第一区域的第一金属导电层中。 通过图案化第一区域的栅介电层和第一金属导电层，去除第一区域的第二金属导电层并形成第一区域的第一栅极电极和第二区域的第二栅极电极，以及栅极电介质 第一金属导电层和第二区域的第二金属导电层。 由于第一和第二区域的栅电极具有不同的厚度，并且第一和第二栅电极中的至少一个包括杂质，所以具有不同功函数的半导体衬底的第一和第二区域。