Method of forming a transistor driver and structure therefor
    1.
    发明申请
    Method of forming a transistor driver and structure therefor 有权
    形成晶体管驱动器的方法及其结构

    公开(公告)号:US20050206436A1

    公开(公告)日:2005-09-22

    申请号:US10805405

    申请日:2004-03-22

    IPC分类号: H02H7/122 H02M1/00 H02M3/158

    摘要: In one embodiment, a power supply system has a transistor driver that receives a PWM signal and generates signals to drive output transistors of the power supply system in response to the PWM signal. If the PWM signal is low for a certain length of time, the transistor driver disables t least one of the output transistors.

    摘要翻译: 在一个实施例中,电源系统具有晶体管驱动器,其接收PWM信号并产生信号以响应于PWM信号来驱动电源系统的输出晶体管。 如果PWM信号在一定长度的时间内为低电平,则晶体管驱动器禁用至少一个输出晶体管。

    Method and circuit for optimizing power efficiency in a DC-DC converter
    2.
    发明申请
    Method and circuit for optimizing power efficiency in a DC-DC converter 有权
    用于优化DC-DC转换器功率效率的方法和电路

    公开(公告)号:US20050057228A1

    公开(公告)日:2005-03-17

    申请号:US10662062

    申请日:2003-09-15

    申请人: Hsien-Te Shih

    发明人: Hsien-Te Shih

    摘要: In one embodiment, a turn-on delay control structure (30) includes a sense FET device (31) that is coupled to a switch node (13) in a synchronous DC-DC converter (10). The DC-DC converter includes a high-side switch (11) and a low-side switch (12). The sense FET device (31) senses current conduction in a body diode (18) of the low-side switch (12). A current sensing/comparator circuit (32) coupled to the sense FET (31) detects changes in current conduction. A delay circuit (33) and a clock/logic circuit (32) coupled to the current sensing/comparator circuit (32) predict and adjust delay time in switching between the high-side switch (11) and the low-side switch (12).

    摘要翻译: 在一个实施例中,导通延迟控制结构(30)包括耦合到同步DC-DC转换器(10)中的开关节点(13)的感测FET器件(31)。 DC-DC转换器包括高侧开关(11)和低侧开关(12)。 感测FET装置(31)感测低侧开关(12)的体二极管(18)中的电流传导。 耦合到感测FET(31)的电流感测/比较器电路(32)检测电流传导的变化。 耦合到电流感测/比较器电路(32)的延迟电路(33)和时钟/逻辑电路(32)预测和调整在高侧开关(11)和低侧开关(12)之间切换的延迟时间 )。