公开(公告)号：US20100104860A1

公开(公告)日：2010-04-29

申请号：US12430449

申请日：2009-04-27

Applicant: Chau-Chang Chou ,  Jyh-Wei Lee ,  Yen-Yi Chen ,  Hsin-Han Lin

Inventor： Chau-Chang Chou ,  Jyh-Wei Lee ,  Yen-Yi Chen ,  Hsin-Han Lin

IPC: B32B9/04 ,  B05D1/36 ,  C23C16/44

CPC classification number: C23C30/005 ,  C23C16/0272 ,  C23C16/271 ,  C23C28/044 ,  Y10T428/26

Abstract: A cemented tungsten carbide-based material includes: a cemented tungsten carbide substrate having a chromized layer that contains a tungsten carbide and a chromium carbide; and a diamond film formed on said chromized layer. A method for making the cemented tungsten carbide-based material involves subjecting a cemented tungsten carbide substrate to chromization so as to form the cemented tungsten carbide substrate with a chromized layer that contains a tungsten carbide and a chromium carbide; and forming a diamond film on the chromized layer.

Abstract translation: 固体碳化钨基材料包括：具有包含碳化钨和碳化铬的铬化层的胶结碳化钨衬底; 以及形成在所述镀铬层上的金刚石膜。 制造硬质合金碳化钨基材料的方法包括使硬质合金基体进行铬化处理，以形成具有碳化钨和碳化铬的铬化层的粘结碳化钨基体; 并在铬化层上形成金刚石膜。

公开(公告)号：US20120282400A1

公开(公告)日：2012-11-08

申请号：US13551643

申请日：2012-07-18

Applicant: Chau-Chang Chou ,  Jyh-Wei Lee ,  Yen-Yi Chen ,  Hsin-Han Lin

Inventor： Chau-Chang Chou ,  Jyh-Wei Lee ,  Yen-Yi Chen ,  Hsin-Han Lin

IPC: C23C16/27

CPC classification number: C23C30/005 ,  C23C16/0272 ,  C23C16/271 ,  C23C28/044 ,  Y10T428/26

Abstract: A method for making a cemented tungsten carbide-based material includes subjecting a cemented tungsten carbide substrate film to chromization so as to form the cemented tungsten carbide substrate with a chromized layer that contains a tungsten carbide and a chromium carbide and forming a diamond film on the chromized layer.

Abstract translation: 制造硬质合金碳化物基材料的方法包括使硬质合金碳化硅基体膜进行铬化处理，以形成含有碳化钨和碳化铬的铬化层并在其上形成金刚石膜的粘结碳化钨基体 镀铬层