公开(公告)号：US20080171442A1

公开(公告)日：2008-07-17

申请号：US11652077

申请日：2007-01-11

申请人： Tsang-Jiuh Wu ,  Syun-Ming Jang ,  Ming-Chung Liang ,  Hsin-Yl Tsai

发明人： Tsang-Jiuh Wu ,  Syun-Ming Jang ,  Ming-Chung Liang ,  Hsin-Yl Tsai

IPC分类号： H01L21/768

CPC分类号： H01L21/76804 ,  H01L21/76807 ,  H01L21/76814 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process for forming an interconnect structure in a low-k dielectric layer includes etching to form trenches in the dielectric layer, removal of photoresist, and further etching to remove damaged portions of the dielectric layer in sidewalls of the trenches. An interconnect structure includes a low-k dielectric layer formed on a substrate, and a conductor embedded in the dielectric layer, the conductor having an edge portion with an inwardly rounded shape.

摘要翻译： 用于在低k电介质层中形成互连结构的工艺包括蚀刻以在电介质层中形成沟槽，去除光致抗蚀剂，并进一步蚀刻以除去沟槽侧壁中介质层的损坏部分。 互连结构包括形成在基板上的低k电介质层和嵌入电介质层中的导体，该导体具有向内圆形的边缘部分。