SYSTEM AND METHOD FOR LITHOGRAPHY PATTERNING
    1.
    发明申请
    SYSTEM AND METHOD FOR LITHOGRAPHY PATTERNING 有权
    系统和方法进行图像绘制

    公开(公告)号:US20130229638A1

    公开(公告)日:2013-09-05

    申请号:US13411245

    申请日:2012-03-02

    IPC分类号: G03B27/42

    CPC分类号: G03F9/7096 G03F9/7019

    摘要: Disclosed is a lithography system. The lithography system includes a lithography exposure tool designed for performing an exposure process to a radiation-sensitive material layer coated on an integrated circuit substrate; an alignment module coupled with the lithography exposure tool, designed for alignment measurement, and configured for transferring the integrated circuit substrate to the lithography exposure tool; and an alignment calibration module designed to calibrate the alignment module relative to the lithography exposure.

    摘要翻译: 公开了一种光刻系统。 光刻系统包括设计用于对涂覆在集成电路基板上的辐射敏感材料层进行曝光处理的光刻曝光工具; 与光刻曝光工具耦合的对准模块,设计用于对准测量,并且被配置为将集成电路基板传送到光刻曝光工具; 以及设计用于相对于光刻曝光校准对准模块的对准校准模块。

    System and method for lithography patterning
    2.
    发明授权
    System and method for lithography patterning 有权
    光刻图案的系统和方法

    公开(公告)号:US09360778B2

    公开(公告)日:2016-06-07

    申请号:US13411245

    申请日:2012-03-02

    CPC分类号: G03F9/7096 G03F9/7019

    摘要: Disclosed is a lithography system. The lithography system includes a lithography exposure tool designed for performing an exposure process to a radiation-sensitive material layer coated on an integrated circuit substrate; an alignment module coupled with the lithography exposure tool, designed for alignment measurement, and configured for transferring the integrated circuit substrate to the lithography exposure tool; and an alignment calibration module designed to calibrate the alignment module relative to the lithography exposure.

    摘要翻译: 公开了一种光刻系统。 光刻系统包括设计用于对涂覆在集成电路基板上的辐射敏感材料层进行曝光处理的光刻曝光工具; 与光刻曝光工具耦合的对准模块,设计用于对准测量,并且被配置为将集成电路基板传送到光刻曝光工具; 以及设计用于相对于光刻曝光校准对准模块的对准校准模块。