Distributed shunt structure for lapping of current perpendicular plane (CPP) heads
    1.
    发明申请
    Distributed shunt structure for lapping of current perpendicular plane (CPP) heads 有权
    分布式分流结构,用于研磨电流垂直平面(CPP)头

    公开(公告)号:US20060103983A1

    公开(公告)日:2006-05-18

    申请号:US10990926

    申请日:2004-11-17

    摘要: An apparatus and method for lapping and fabricating a read/write head is described. The lapping method includes performing a first lapping process on a structure having the read/write head fabricated therein. The first lapping process is for reducing a first resistive region. The first resistive region is located proximal to a surface of the structure. The first lapping process is for achieving a first lapping benchmark. The lapping method further includes performing a second lapping process on a second resistive region. The second lapping process laps at a rate lesser than the first lapping process. The second lapping process is for achieving a second lapping benchmark. The second resistive region is interposed between the first resistive region and the read/write head. The second resistive region has a different resistive value than the second resistive region.

    摘要翻译: 描述了用于研磨和制造读/写头的装置和方法。 研磨方法包括对其中制造读/写头的结构执行第一研磨处理。 第一次研磨工艺用于减少第一电阻区域。 第一电阻区域位于结构的表面附近。 第一个研磨过程是实现第一次研磨基准。 研磨方法还包括在第二电阻区域上进行第二研磨处理。 第二次研磨过程以比第一次研磨过程低的速度进行。 第二次研磨过程是实现第二次研磨基准。 第二电阻区域介于第一电阻区域和读/写头之间。 第二电阻区域具有与第二电阻区域不同的电阻值。