公开(公告)号：US08709895B2

公开(公告)日：2014-04-29

申请号：US13038346

申请日：2011-03-01

申请人： Sung-Shan Tai ,  Hung-Sheng Tsai

发明人： Sung-Shan Tai ,  Hung-Sheng Tsai

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0638 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a termination structure of a power semiconductor device and a manufacturing method thereof. The power semiconductor device has an active region and a termination region. The termination region surrounds the active region, and the termination structure is disposed in the termination region. The termination structure includes a semiconductor substrate, an insulating layer and a metal layer. The semiconductor substrate has a trench disposed in the termination region. The insulating layer is partially filled into the trench and covers the semiconductor substrate, and a top surface of the insulating layer has a hole. The metal layer is disposed on the insulating layer, and is filled into the hole.

摘要翻译： 本发明提供一种功率半导体器件的端接结构及其制造方法。 功率半导体器件具有有源区和端接区。 终端区域围绕有源区域，终端结构设置在终端区域中。 端接结构包括半导体衬底，绝缘层和金属层。 半导体衬底具有设置在终端区域中的沟槽。 绝缘层部分地填充到沟槽中并且覆盖半导体衬底，并且绝缘层的顶表面具有孔。 金属层设置在绝缘层上，并被填充到孔中。

公开(公告)号：USD562158S1

公开(公告)日：2008-02-19

申请号：US29250619

申请日：2006-11-22

申请人： Hung-Sheng Tsai

设计人： Hung-Sheng Tsai

公开(公告)号：US20120112268A1

公开(公告)日：2012-05-10

申请号：US13038346

申请日：2011-03-01

申请人： Sung-Shan Tai ,  Hung-Sheng Tsai

发明人： Sung-Shan Tai ,  Hung-Sheng Tsai

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0638 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a termination structure of a power semiconductor device and a manufacturing method thereof. The power semiconductor device has an active region and a termination region. The termination region surrounds the active region, and the termination structure is disposed in the termination region. The termination structure includes a semiconductor substrate, an insulating layer and a metal layer. The semiconductor substrate has a trench disposed in the termination region. The insulating layer is partially filled into the trench and covers the semiconductor substrate, and a top surface of the insulating layer has a hole. The metal layer is disposed on the insulating layer, and is filled into the hole.

摘要翻译： 本发明提供一种功率半导体器件的端接结构及其制造方法。 功率半导体器件具有有源区和端接区。 终端区域围绕有源区域，终端结构设置在终端区域中。 端接结构包括半导体衬底，绝缘层和金属层。 半导体衬底具有设置在终端区域中的沟槽。 绝缘层部分地填充到沟槽中并且覆盖半导体衬底，并且绝缘层的顶表面具有孔。 金属层设置在绝缘层上，并被填充到孔中。