公开(公告)号：US11896984B2

公开(公告)日：2024-02-13

申请号：US16499863

申请日：2018-03-30

申请人： Hyun Sun Shin

发明人： Hyun Sun Shin

IPC分类号： B04B7/08

CPC分类号： B04B7/08 ,  B01L2300/0864 ,  B01L2400/0409

摘要： The present invention relates to a container for centrifugation. The container for centrifugation includes: a main body (100) including a first chamber (110) in which a material to be centrifuged is received, a second chamber (120) in which a suspended material centrifuged from the material in the first chamber (110) is decanted from the first chamber (110) and received and which is positioned on one side of the first chamber (110), and a coupling part (130) formed to surround the first chamber (110) and the outside of the upper end of the second chamber (120); and a cover (200) which covers an upper portion of the main body (100) and forms a fluid communication path (P) of the decanted suspended material between the first chamber (110) and the second chamber (120).

公开(公告)号：USD536847S1

公开(公告)日：2007-02-13

申请号：US29229443

申请日：2005-05-09

申请人： Hyun Sun Shin

设计人： Hyun Sun Shin

公开(公告)号：US20200023381A1

公开(公告)日：2020-01-23

申请号：US16499863

申请日：2018-03-30

申请人： Hyun Sun SHIN

发明人： Hyun Sun SHIN

IPC分类号： B04B7/08

摘要： The present invention relates to a container for centrifugation. The container for centrifugation includes: a main body (100) including a first chamber (110) in which a material to be centrifuged is received, a second chamber (120) in which a suspended material centrifuged from the material in the first chamber (110) is decanted from the first chamber (110) and received and which is positioned on one side of the first chamber (110), and a coupling part (130) formed to surround the first chamber (110) and the outside of the upper end of the second chamber (120); and a cover (200) which covers an upper portion of the main body (100) and forms a fluid communication path (P) of the decanted suspended material between the first chamber (110) and the second chamber (120).

公开(公告)号：USD536848S1

公开(公告)日：2007-02-13

申请号：US29229785

申请日：2005-05-12

申请人： Hyun Sun Shin

设计人： Hyun Sun Shin

公开(公告)号：US07550373B2

公开(公告)日：2009-06-23

申请号：US11027076

申请日：2004-12-29

申请人： Hyun Sun Shin

发明人： Hyun Sun Shin

IPC分类号： H01L21/3205

CPC分类号： H01L21/31111 ,  H01L21/28052

摘要： Methods of fabricating semiconductor devices are disclosed. An illustrated example method protects spacers and active areas by performing impurity ion implantation on an oxide layer prior to etching the oxide layer. The illustrated method includes forming a gate on a semiconductor substrate, forming a spacer on a sidewall of the gate, forming an oxide layer over the substrate, forming a mask on the oxide layer to cover a non-salicide area, implanting impurity ions into a portion of the oxide layer which is not covered by the mask, removing the portion of the oxide layer which is implanted with impurity ions, performing salicidation on the substrate, and removing the mask.

摘要翻译： 公开了制造半导体器件的方法。 所示的示例性方法通过在蚀刻氧化物层之前在氧化物层上进行杂质离子注入来保护间隔物和有源区。 所示的方法包括在半导体衬底上形成栅极，在栅极的侧壁上形成间隔物，在衬底上形成氧化物层，在氧化物层上形成掩模以覆盖非自对准硅化物区域，将杂质离子注入到 未被掩模覆盖的氧化物层的部分，去除注入有杂质离子的氧化物层的部分，在基板上进行水化，并除去掩模。