公开(公告)号：US10515911B2

公开(公告)日：2019-12-24

申请号：US14832306

申请日：2015-08-21

申请人： HyunSuk Chun ,  Jong-Woo Park ,  Chul-Yong Park ,  Jeong-Won Yoon

发明人： HyunSuk Chun ,  Jong-Woo Park ,  Chul-Yong Park ,  Jeong-Won Yoon

IPC分类号： H01L23/00 ,  H01L23/522 ,  H01L23/532

摘要： Semiconductor devices include an interlayer insulating layer on a substrate, a first capacitor structure in the interlayer insulating layer, and a conductive layer including a terminal pad on the interlayer insulating layer. The first capacitor structure includes at least one first laminate, the at least one first laminate including a first lower electrode, a first capacitor insulating layer, and a first upper electrode sequentially on the substrate. The terminal pad does not overlap with the first capacitor structure.