公开(公告)号：US06475643B1

公开(公告)日：2002-11-05

申请号：US09699487

申请日：2000-10-31

Applicant: Tomohide Hasegawa ,  Ichiro Nawata

Inventor： Tomohide Hasegawa ,  Ichiro Nawata

IPC: B32B1501

CPC classification number: C22C13/00 ,  B32B15/01 ,  C23C2/08 ,  Y10S428/929 ,  Y10S428/939 ,  Y10T428/12715 ,  Y10T428/12722

Abstract: A plated lead for electrical devices is plated with a Sn-based lead-free alloy containing 0.001-0.1 weight percent of Ga. The formation of oxides in a hot dipping bath can be suppressed by the presence of 0.001-0.1 weight percent of P in the alloy.

Abstract translation: 用于电子器件的电镀引线镀有含有0.001-0.1重量％Ga的Sn基无铅合金，热浸镀浴中氧化物的形成可以通过存在0.001-0.1重量％的P in 合金。