Fault-tolerant multielectrode array for brain implantable device
    1.
    发明授权
    Fault-tolerant multielectrode array for brain implantable device 有权
    用于脑植入装置的容错多电极阵列

    公开(公告)号:US09277874B2

    公开(公告)日:2016-03-08

    申请号:US14114390

    申请日:2012-04-27

    IPC分类号: A61B5/0478 A61B5/0476

    摘要: A multielectrode array with fault-tolerance for use in conjunction with a brain implantable device includes a sensor grid composed of a plurality of sensors, the plurality of sensors including primary sensors and spare sensors. The multielectrode array also includes signal processing circuitry associated with the plurality of sensors and a control system associated with the sensor grid for replacing faulty primary sensors with spare sensors.

    摘要翻译: 与脑植入装置一起使用的具有容错性的多电极阵列包括由多个传感器组成的传感器网格,所述多个传感器包括主传感器和备用传感器。 多电极阵列还包括与多个传感器相关联的信号处理电路和与传感器网格相关联的控制系统,用于用备用传感器替换故障的主传感器。

    FAULT-TOLERANT MULTIELECTRODE ARRAY FOR BRAIN IMPLANTABLE DEVICE
    2.
    发明申请
    FAULT-TOLERANT MULTIELECTRODE ARRAY FOR BRAIN IMPLANTABLE DEVICE 有权
    用于大脑可植入装置的容错多电极阵列

    公开(公告)号:US20140058239A1

    公开(公告)日:2014-02-27

    申请号:US14114390

    申请日:2012-04-27

    IPC分类号: A61B5/0478

    摘要: A multielectrode array with fault-tolerance for use in conjunction with a brain implantable device includes a sensor grid composed of a plurality of sensors, the plurality of sensors including primary sensors and spare sensors. The multielectrode array also includes signal processing circuitry associated with the plurality of sensors and a control system associated with the sensor grid for replacing faulty primary sensors with spare sensors.

    摘要翻译: 与脑植入装置一起使用的具有容错性的多电极阵列包括由多个传感器组成的传感器网格,所述多个传感器包括主传感器和备用传感器。 多电极阵列还包括与多个传感器相关联的信号处理电路和与传感器网格相关联的控制系统,用于用备用传感器替换故障的主传感器。