公开(公告)号：US08872260B2

公开(公告)日：2014-10-28

申请号：US13489227

申请日：2012-06-05

申请人： Jung-Yi Guo ,  Chun-Min Cheng

发明人： Jung-Yi Guo ,  Chun-Min Cheng

IPC分类号： H01L29/00

CPC分类号： H01L21/76237

摘要： An apparatus of and method for making a semiconductor structure having a shallow trench isolation (STI) trench with a substantially v-shaped profile, that is the distance between top portions is greater than the distance between bottom portions of shallow trench isolation (STI) structure sidewalls adjacent to the trench, provides for substantially seamless and substantially void-free gate structures. The semiconductor structures are formed by implanting an implantation species into the sidewalls, which allows for the top portions of the sidewalls to be etched away at a greater rate than that of the bottom portions, resulting in the substantially v-shaped profile. And the substantially v-shaped profile allows for subsequent device layers to more easily and smoothly fill in the v-shaped trenches, due to a wider opening toward the tops of the trenches.

摘要翻译： 用于制造具有基本上V形轮廓的浅沟槽隔离（STI）沟槽的半导体结构的装置和方法，即，顶部之间的距离大于浅沟槽隔离（STI）结构的底部之间的距离 邻近沟槽的侧壁提供基本上无缝且基本上无空隙的栅极结构。 半导体结构通过将注入物质注入到侧壁中形成，这允许侧壁的顶部以比底部部分更高的速率被蚀刻掉，从而形成基本上V形的轮廓。 并且由于朝向沟槽的顶部的更宽的开口，基本上V形的轮廓允许随后的器件层更容易且平滑地填充在V形沟槽中。

公开(公告)号：US20130320484A1

公开(公告)日：2013-12-05

申请号：US13489227

申请日：2012-06-05

申请人： JUNG-YI GUO ,  CHUN-MIN CHENG

发明人： JUNG-YI GUO ,  CHUN-MIN CHENG

IPC分类号： H01L29/00 ,  H01L21/76

CPC分类号： H01L21/76237

摘要： An apparatus of and method for making a semiconductor structure having a shallow trench isolation (STI) trench with a substantially v-shaped profile, that is the distance between top portions is greater than the distance between bottom portions of shallow trench isolation (STI) structure sidewalls adjacent to the trench, provides for substantially seamless and substantially void-free gate structures. The semiconductor structures are formed by implanting an implantation species into the sidewalls, which allows for the top portions of the sidewalls to be etched away at a greater rate than that of the bottom portions, resulting in the substantially v-shaped profile. And the substantially v-shaped profile allows for subsequent device layers to more easily and smoothly fill in the v-shaped trenches, due to a wider opening toward the tops of the trenches.

摘要翻译： 用于制造具有基本上V形轮廓的浅沟槽隔离（STI）沟槽的半导体结构的装置和方法，即，顶部之间的距离大于浅沟槽隔离（STI）结构的底部之间的距离 邻近沟槽的侧壁提供基本上无缝且基本上无空隙的栅极结构。 半导体结构通过将注入物质注入到侧壁中形成，这允许侧壁的顶部以比底部部分更高的速率被蚀刻掉，从而形成基本上V形的轮廓。 并且由于朝向沟槽的顶部的更宽的开口，基本上V形的轮廓允许随后的器件层更容易且平滑地填充在V形沟槽中。