公开(公告)号：US20120174974A1

公开(公告)日：2012-07-12

申请号：US13340840

申请日：2011-12-30

申请人： Chandrashekhar S. Khadilkar ,  Srinivasan Sridharan ,  Nazarali Merchant ,  Jackie Davis ,  Aziz S. Shaikh ,  Hong Jiang

发明人： Chandrashekhar S. Khadilkar ,  Srinivasan Sridharan ,  Nazarali Merchant ,  Jackie Davis ,  Aziz S. Shaikh ,  Hong Jiang

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01B1/22 ,  Y02E10/50

摘要： Solar cell contacts having good electrical performance are made by a process involving: (a) providing a silicon wafer substrate; (b) providing a paste comprising: (i) aluminum, (ii) glass frit, and (iii) a separate and distinct amount of at least one oxide, such that, together with the aluminum, the glass frit and oxide forms a paste having an exothermic reaction peak, at a temperature of at least 660° C. to less than 900° C., (c) applying the paste to the silicon wafer substrate to form a coated substrate, and (d) firing the coated substrate for a time and at a temperature sufficient to sinter the aluminum and fuse the glass frit and oxide.

摘要翻译： 具有良好电性能的太阳能电池触点通过以下工艺制成：（a）提供硅晶片衬底; （b）提供一种糊料，其包括：（i）铝，（ii）玻璃料，和（iii）分开和不同量的至少一种氧化物，使得与铝一起，玻璃料和氧化物形成糊状物 在至少660℃至小于900℃的温度下具有放热反应峰，（c）将糊料涂布到硅晶片衬底上以形成涂覆的衬底，并且（d）将涂覆的衬底烧制 一段时间和足以烧结铝并熔化玻璃料和氧化物的温度。

公开(公告)号：US08815636B2

公开(公告)日：2014-08-26

申请号：US13340840

申请日：2011-12-30

申请人： Chandrashekhar S. Khadilkar ,  Srinivasan Sridharan ,  Nazarali Merchant ,  Jackie Davis ,  Aziz S. Shaikh ,  Hong Jiang

发明人： Chandrashekhar S. Khadilkar ,  Srinivasan Sridharan ,  Nazarali Merchant ,  Jackie Davis ,  Aziz S. Shaikh ,  Hong Jiang

IPC分类号： H01L21/00

CPC分类号： H01L31/022425 ,  H01B1/22 ,  Y02E10/50

摘要： Solar cell contacts having good electrical performance are made by a process involving: (a) providing a silicon wafer substrate; (b) providing a paste comprising: (i) aluminum, (ii) glass frit, and (iii) a separate and distinct amount of at least one oxide, such that, together with the aluminum, the glass frit and oxide forms a paste having an exothermic reaction peak, at a temperature of at least 660° C. to less than 900° C., (c) applying the paste to the silicon wafer substrate to form a coated substrate, and (d) firing the coated substrate for a time and at a temperature sufficient to sinter the aluminum and fuse the glass frit and oxide.

摘要翻译： 具有良好电性能的太阳能电池触点通过以下工艺制成：（a）提供硅晶片衬底; （b）提供一种糊料，其包括：（i）铝，（ii）玻璃料，和（iii）分开和不同量的至少一种氧化物，使得与铝一起，玻璃料和氧化物形成糊状物 在至少660℃至小于900℃的温度下具有放热反应峰，（c）将糊料涂布到硅晶片衬底上以形成涂覆的衬底，并且（d）将涂覆的衬底烧制 一段时间和足以烧结铝并熔化玻璃料和氧化物的温度。