公开(公告)号：US4110625A

公开(公告)日：1978-08-29

申请号：US752779

申请日：1976-12-20

申请人： James A. Cainns ,  Allen Lurio ,  James F. Ziegler

发明人： James A. Cainns ,  Allen Lurio ,  James F. Ziegler

IPC分类号： B23K15/00 ,  G01N23/225 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265 ,  A61K27/02

CPC分类号： H01J37/244 ,  G01N23/225 ,  H01J37/3171 ,  H01J2237/2444 ,  H01J2237/24507

摘要： Practice of this disclosure obtains a measure of the dose or fluence of implanted ions into a target for device fabrication by monitoring emitted X-rays. Illustratively, ion beams of B.sup.+, P.sup.+ or As.sup.+ have been implanted into Si over the ion energy range of 20 KeV to 2800 KeV and the data of counts of emitted X-rays has been correlated with both the solid angle intercepted by the counter and the charge intercepted by the target. In particular, the low energy soft Si(L) X-rays at 136A have been discovered for the practice of this disclosure to be very intense. The principles of this disclosure are especially applicable for very low ion doses, i.e. .ltorsim. 10.sup.12 /cm.sup.2 where charge integration is not feasible; and for neutral beam implantation with currents above about 2 milliamperes. Reproducible semiconductor devices can be fabricated by practice of this disclosure, i.e., with substantially reproducible operational characteristics, e.g., bipolar and field-effect transistors with silicon integrated circuit technology.

摘要翻译： 本公开的实践通过监测发射的X射线获得了注入离子到装置制造目标中的剂量或注量的量度。 说明性地，在20KeV至2800KeV的离子能量范围内已经将B +，P +或As +的离子束注入到Si中，并且所发射的X射线的计数数据与由计数器截取的立体角和 目标截获的费用。 特别地，已经发现136A处的低能量软Si（L）X射线是非常强烈的。 本公开的原理尤其适用于非常低的离子剂量，即不含电荷积分的APPROXLESS 1012 / cm 2; 并且用于高于约2毫安的电流的中性束注入。 可以通过本公开的实践来制造可再生半导体器件，即具有基本上可再现的操作特性，例如具有硅集成电路技术的双极和场效应晶体管。