公开(公告)号：US08048226B2

公开(公告)日：2011-11-01

申请号：US11694312

申请日：2007-03-30

申请人： Mirko Vukovic ,  James Grootegoed

发明人： Mirko Vukovic ,  James Grootegoed

IPC分类号： C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4585 ,  C23C16/52 ,  H01L21/68735 ,  Y10T137/0324 ,  Y10T428/215

摘要： A processing system for treating a substrate includes a process chamber, a substrate holder, a gas distribution system, and a flow modulation element. The process chamber has a pumping system to evacuate the process chamber. The substrate holder is coupled to the process chamber and supports the substrate. The gas distribution system is coupled to the process chamber. The gas distribution system introduces a process gas to a process space above an upper surface of the substrate. The flow modulation element is coupled to the substrate holder beyond a peripheral edge of the substrate. The flow modulation element includes one or more gas distribution openings that introduce an additive process gas beyond the peripheral edge of the substrate in a direction substantially away from the substrate. The additive process gas has a directional component substantially parallel to the upper surface of the substrate.

摘要翻译： 用于处理衬底的处理系统包括处理室，衬底保持器，气体分配系统和流动调制元件。 处理室具有泵送系统以抽空处理室。 衬底保持器联接到处理室并支撑衬底。 气体分配系统耦合到处理室。 气体分配系统将工艺气体引入衬底的上表面上方的工艺空间。 流动调节元件连接到衬底保持器超过衬底的周边边缘。 流动调节元件包括一个或多个气体分配开口，其在基本上远离基底的方向上引入超过基底的周边边缘的添加剂处理气体。 添加处理气体具有基本上平行于衬底的上表面的方向分量。

公开(公告)号：US20090242383A1

公开(公告)日：2009-10-01

申请号：US12059649

申请日：2008-03-31

申请人： Mirko Vukovic ,  James Grootegoed ,  Rodney L. Robison ,  Toshiaki Fujisato

发明人： Mirko Vukovic ,  James Grootegoed ,  Rodney L. Robison ,  Toshiaki Fujisato

IPC分类号： C23C14/34

CPC分类号： C23C14/50 ,  H01J37/32623 ,  H01J37/34 ,  H01J37/3441

摘要： An IPVD source assembly and method is provided for supplying and ionizing material for coating a semiconductor wafer. The assembly includes a process space containing a plasma and an electrostatic chuck moveable in to and out of the process space. The chuck is configured to support the semiconductor wafer. The assembly further includes a first shield in electrical communication with a table and a second shield. The first shield is configured to shield at least a portion of the electrostatic chuck when the chuck is in the process space and the second shield is configured to shield at least a portion of a space below the electrostatic chuck and the process space. A conducting element electrically connects the second shield to the table to substantially prevent a formation of a second plasma in the space below the electrostatic chuck and the process space.

摘要翻译： 提供IPVD源组件和方法用于供给和电离用于涂覆半导体晶片的材料。 该组件包括含有等离子体的处理空间和可移入和移出工艺空间的静电吸盘。 卡盘构造成支撑半导体晶片。 组件还包括与桌子和第二屏蔽件电连通的第一屏蔽件。 第一屏蔽被配置为当卡盘在处理空间中时屏蔽静电卡盘的至少一部分，并且第二屏蔽构造成屏蔽静电卡盘和处理空间下方的空间的至少一部分。 导电元件将第二屏蔽件电连接到工作台，以基本上防止在静电卡盘和处理空间下方的空间中形成第二等离子体。

公开(公告)号：US20080236497A1

公开(公告)日：2008-10-02

申请号：US11694312

申请日：2007-03-30

申请人： Mirko Vukovic ,  James Grootegoed

发明人： Mirko Vukovic ,  James Grootegoed

IPC分类号： C23C16/44

CPC分类号： C23C16/45521 ,  C23C16/4585 ,  C23C16/52 ,  H01L21/68735 ,  Y10T137/0324 ,  Y10T428/215

摘要： A processing system for treating a substrate includes a process chamber, a substrate holder, a gas distribution system, and a flow modulation element. The process chamber has a pumping system to evacuate the process chamber. The substrate holder is coupled to the process chamber and supports the substrate. The gas distribution system is coupled to the process chamber. The gas distribution system introduces a process gas to a process space above an upper surface of the substrate. The flow modulation element is coupled to the substrate holder beyond a peripheral edge of the substrate. The flow modulation element includes one or more gas distribution openings that introduce an additive process gas beyond the peripheral edge of the substrate in a direction substantially away from the substrate. The additive process gas has a directional component substantially parallel to the upper surface of the substrate

摘要翻译： 用于处理衬底的处理系统包括处理室，衬底保持器，气体分配系统和流动调制元件。 处理室具有泵送系统以抽空处理室。 衬底保持器联接到处理室并支撑衬底。 气体分配系统耦合到处理室。 气体分配系统将工艺气体引入衬底的上表面上方的工艺空间。 流动调节元件连接到衬底保持器超过衬底的周边边缘。 流动调节元件包括一个或多个气体分配开口，其在基本上远离基底的方向上引入超过基底的周边边缘的添加剂处理气体。 添加处理气体具有基本上平行于衬底的上表面的方向分量