公开(公告)号：US20060128053A1

公开(公告)日：2006-06-15

申请号：US11284797

申请日：2005-11-21

申请人： Alan Heeger ,  Daniel Moses ,  Guangming Wang ,  James Swensen

发明人： Alan Heeger ,  Daniel Moses ,  Guangming Wang ,  James Swensen

IPC分类号： H01L21/00 ,  H01L51/40 ,  H01L21/31

CPC分类号： H01L51/0545 ,  H01L51/0003 ,  H01L51/0036

摘要： Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 Å to 1 μm. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.