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公开(公告)号:US07126135B2
公开(公告)日:2006-10-24
申请号:US10736926
申请日:2003-12-16
申请人: Johan Lamotte , Jean Verelst , Luc Struye , Paul Leblans
发明人: Johan Lamotte , Jean Verelst , Luc Struye , Paul Leblans
IPC分类号: H05B33/00
CPC分类号: G21K4/00 , C09K11/7733
摘要: A Eu-doped CsBr-type storage phosphor screen or panel has been disclosed, providing ratios of ultraviolet luminescence intensities of at least 10/9 after having been exposed to radiation having a wavelength in the range from 150 to 400 nm, measured at same sites without and with pretreatment exposure of said storage phosphor screen or panel with short ultraviolet radiation in the range from 150 to 300 nm and having an energy of 10 mJ/mm2, as well as a method of producing a stimulable phosphor screen or panel, characterized in that during or after at least one of the manufacturing steps a radiation exposure treatment is given with radiation sources emitting short ultraviolet radiation in the range from 150 to 300 nm with an energy of at least 10 mJ/mm2.
摘要翻译: 已经公开了Eu掺杂的CsBr型存储荧光屏或面板,其在暴露于波长在150至400nm的辐射之后提供至少10/9的紫外发光强度的比率,在相同的位置 所述存储荧光屏或面板在150-300nm范围内具有短的紫外线辐射并具有10mJ / mm 2的能量的预处理曝光,以及一种制备 其特征在于,在至少一个制造步骤期间或之后,对发射150至300nm范围内的短紫外线辐射的辐射源进行辐射曝光处理,其能量至少为10mJ / mm 2 SUP>。
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公开(公告)号:US20050077477A1
公开(公告)日:2005-04-14
申请号:US10736926
申请日:2003-12-16
申请人: Johan Lamotte , Jean Verelst , Luc Struye , Paul Leblans
发明人: Johan Lamotte , Jean Verelst , Luc Struye , Paul Leblans
CPC分类号: G21K4/00 , C09K11/7733
摘要: A Eu-doped CsBr-type storage phosphor screen or panel has been disclosed, providing ratios of ultraviolet luminescence intensities of at least 10/9 after having been exposed to radiation having a wavelength in the range from 150 to 400 nm, measured at same sites without and with pretreatment exposure of said storage phosphor screen or panel with short ultraviolet radiation in the range from 150 to 300 nm and having an energy of 10 mJ/mm2, as well as a method of producing a stimulable phosphor screen or panel, characterized in that during or after at least one of the manufacturing steps a radiation exposure treatment is given with radiation sources emitting short ultraviolet radiation in the range from 150 to 300 nm with an energy of at least 10 mJ/mm2.
摘要翻译: 已经公开了Eu掺杂的CsBr型存储荧光屏或面板,其在暴露于波长在150至400nm的辐射之后提供至少10/9的紫外发光强度的比率,在相同的位置 所述存储荧光屏或面板在150-300nm范围内具有短紫外线辐射并具有10mJ / mm 2的能量的预处理曝光以及产生可刺激荧光屏或面板的方法 其特征在于,在所述制造步骤中的至少一个之后或之后,以150-300纳米的能量至少为10mJ / mm 2的发射短的紫外线辐射的辐射源给予辐射曝光处理。
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