公开(公告)号：US07338826B2

公开(公告)日：2008-03-04

申请号：US11311592

申请日：2005-12-09

申请人： Jeffrey A. Mittereder ,  Andrew P. Edwards ,  Steven C. Binari

发明人： Jeffrey A. Mittereder ,  Andrew P. Edwards ,  Steven C. Binari

IPC分类号： H01L21/00 ,  H01L21/338 ,  H01L21/469 ,  H01L21/31

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

摘要： This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN barrier and a GaN buffer, with the channel disposed, when present, at the interface of the barrier and the buffer. Surface treated with ammonia plasma resembles untreated surface. The method pertains to treatment of the device with ammonia plasma prior to passivation to extend reliability of the device beyond a period of time on the order of 300 hours of operation, the device typically being a 2 DEG AlGaN/GaN high electron mobility transistor with essentially no gate lag and with essentially no rf power output degradation.

摘要翻译： 本发明涉及一种电子设备及其制造方法。 该器件是异质结晶体管，特别是高电子迁移率晶体管，其特征在于存在2°通道。 本发明的晶体管包含AlGaN势垒和GaN缓冲器，其中通道设置在阻挡层和缓冲器的界面处。 用氨等离子体进行表面处理与未处理的表面相似。 该方法涉及在钝化之前用氨等离子体处理器件，以将器件的可靠性延长超过约300小时的操作时间，该器件通常为2°AlGaN / GaN高电子迁移率晶体管，其基本上 没有门滞，并且基本上没有rf功率输出降级。