公开(公告)号：US06514814B2

公开(公告)日：2003-02-04

申请号：US09884029

申请日：2001-06-20

Applicant: Cheng-Chung Jaing ,  Jyh-Shin Chen ,  Jen-Inn Chyi ,  Jeng-Jiing Sheu

Inventor： Cheng-Chung Jaing ,  Jyh-Shin Chen ,  Jen-Inn Chyi ,  Jeng-Jiing Sheu

IPC: H01L218242

CPC classification number: H01L28/56 ,  C23C14/088 ,  H01L28/60 ,  H01L28/75

Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.

Abstract translation: 用于形成薄膜电容器的制备包括：形成诸如钛酸锶钡[（Ba，Sr）TiO 3]膜的非晶铁电体膜，用作金属电极和多晶铁电体膜之间的界面，例如（Ba， Sr）TiO3膜。 鉴于多晶强电介质膜具有高介电常数的事实，多晶铁电体膜用作薄膜电容器的电介质层。 非晶铁电体膜用作抑制薄膜电容器的漏电流的缓冲层。 通过溅射和诸如氩的工作气体和诸如氧的反应性气体引入到在室温下产生等离子体的反应室中生长非晶铁电膜。

公开(公告)号：US06309895B1

公开(公告)日：2001-10-30

申请号：US09237662

申请日：1999-01-27

Applicant: Cheng-Chung Jaing ,  Jyh-Shin Chen ,  Jen-Inn Chyi ,  Jeng-Jiing Sheu

Inventor： Cheng-Chung Jaing ,  Jyh-Shin Chen ,  Jen-Inn Chyi ,  Jeng-Jiing Sheu

IPC: H01G706

CPC classification number: H01L28/56 ,  C23C14/088 ,  H01L28/60 ,  H01L28/75

Abstract: A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.

Abstract translation: 用于形成薄膜电容器的制备包括：形成诸如钛酸锶钡[（Ba，Sr）TiO 3]膜的非晶铁电体膜，用作金属电极和多晶铁电体膜之间的界面，例如（Ba， Sr）TiO3膜。 鉴于多晶强电介质膜具有高介电常数的事实，多晶铁电体膜用作薄膜电容器的电介质层。 非晶铁电体膜用作抑制薄膜电容器的漏电流的缓冲层。 通过溅射和诸如氩的工作气体和诸如氧的反应性气体引入到在室温下产生等离子体的反应室中生长非晶铁电膜。