公开(公告)号：US20050221571A1

公开(公告)日：2005-10-06

申请号：US10814673

申请日：2004-03-30

申请人： Richard Irwin ,  Tony Phan ,  Hong-Ryong Kim ,  Ming-Yeh Chuang ,  Jennifer Dumin ,  Patrick Jones ,  Fredric Bailey

发明人： Richard Irwin ,  Tony Phan ,  Hong-Ryong Kim ,  Ming-Yeh Chuang ,  Jennifer Dumin ,  Patrick Jones ,  Fredric Bailey

IPC分类号： H01L21/20 ,  H01L21/329 ,  H01L29/47 ,  H01L29/80 ,  H01L29/872 ,  H01L29/93 ,  H01L31/112

CPC分类号： H01L29/66143 ,  H01L29/47 ,  H01L29/872

摘要： An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3, forming a barrier layer 26 over the semiconductor substrate 3, forming a first metal layer 23 over the semiconductor substrate 3, annealing the semiconductor substrate 3 to form areas 24 of reacted first metal and areas 23 of un-reacted first metal, and removing selected areas 23 of the un-reacted first metal. The method further includes forming a second metal layer 30 over the semiconductor substrate 3 and annealing the semiconductor substrate 3 to form areas 28 of reacted second metal and areas 30 of un-reacted second metal

摘要翻译： 本发明的实施例是具有半导体衬底3，第一金属24，阻挡层26和第二金属28的肖特基二极管22。 本发明的另一实施例是制造肖特基二极管22的方法，其包括提供半导体衬底3，在半导体衬底3上形成阻挡层26，在半导体衬底3上方形成第一金属层23，退火半导体衬底3 以形成反应的第一金属的区域24和未反应的第一金属的区域23，并且去除未反应的第一金属的选定区域23。 该方法还包括在半导体衬底3上形成第二金属层30并退火半导体衬底3以形成反应的第二金属的区域28和未反应的第二金属的区域30

公开(公告)号：US20050218433A1

公开(公告)日：2005-10-06

申请号：US11095245

申请日：2005-03-30

申请人： Richard Irwin ,  Tony Phan ,  Hong-Ryong Kim ,  Ming-Yeh Chuang ,  Jennifer Dumin ,  Patrick Jones

发明人： Richard Irwin ,  Tony Phan ,  Hong-Ryong Kim ,  Ming-Yeh Chuang ,  Jennifer Dumin ,  Patrick Jones

IPC分类号： H01L21/20 ,  H01L21/329 ,  H01L29/47 ,  H01L29/80 ,  H01L29/872 ,  H01L29/93 ,  H01L31/112

CPC分类号： H01L29/66143 ,  H01L29/47 ,  H01L29/872

摘要： An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3, forming a barrier layer 26 over the semiconductor substrate 3, forming a first metal layer 23 over the semiconductor substrate 3, annealing the semiconductor substrate 3 to form areas 24 of reacted first metal and areas 23 of un-reacted first metal, and removing selected areas 23 of the un-reacted first metal. The method further includes forming a second metal layer 30 over the semiconductor substrate 3 and annealing the semiconductor substrate 3 to form areas 28 of reacted second metal and areas 30 of un-reacted second metal.

摘要翻译： 本发明的实施例是具有半导体衬底3，第一金属24，阻挡层26和第二金属28的肖特基二极管22。 本发明的另一实施例是制造肖特基二极管22的方法，其包括提供半导体衬底3，在半导体衬底3上形成阻挡层26，在半导体衬底3上形成第一金属层23，对半导体衬底3退火 以形成反应的第一金属的区域24和未反应的第一金属的区域23，并且去除未反应的第一金属的选定区域23。 该方法还包括在半导体衬底3上形成第二金属层30并退火半导体衬底3以形成反应的第二金属的区域28和未反应的第二金属的区域30。