Etching technique for creation of thermally-isolated microstructures
    1.
    发明授权
    Etching technique for creation of thermally-isolated microstructures 有权
    用于创建热隔离微结构的蚀刻技术

    公开(公告)号:US08969203B2

    公开(公告)日:2015-03-03

    申请号:US13091417

    申请日:2011-04-21

    摘要: There is described a method for creating a thermally-isolated microstructure on a slab of mono-crystalline silicon which uses a hybrid dry-then-wet etch technique that when controlled, can produce microstructures without any silicon adhering underneath, microstructures having small masses of silicon adhering underneath, and microstructures that are still attached to the slab of mono-crystalline silicon via a waisted silicon body. When creating the microstructures with a waisted silicon body, the thermal isolation of the microstructure can be designed by controlling the depth of the etching and the size of the waist.

    摘要翻译: 描述了在单晶硅板上形成热隔离微结构的方法,该方法使用混合干 - 湿蚀刻技术,当被控制时,可以产生微结构,而没有任何硅粘附在其下,微结构具有小质量的硅 粘附在下面,以及通过腰部硅体仍然附着在单晶硅板上的微结构。 当用腰部硅体制造微结构时,可以通过控制蚀刻深度和腰部尺寸来设计微结构的热隔离。

    Etching Technique For Creation of Thermally-Isolated Microstructures
    2.
    发明申请
    Etching Technique For Creation of Thermally-Isolated Microstructures 有权
    用于形成热隔离微结构的蚀刻技术

    公开(公告)号:US20080179713A1

    公开(公告)日:2008-07-31

    申请号:US11667008

    申请日:2005-11-10

    摘要: There is described a method for creating a thermally-isolated microstructure on a slab of mono-crystalline silicon which uses a hybrid dry-then-wet etch technique that when controlled, can produce microstructures without any silicon adhering underneath, microstructures having small masses of silicon adhering underneath, and microstructures that are still attached to the slab of mono-crystalline silicon via a waisted silicon body. When creating the microstructures with a waisted silicon body, the thermal isolation of the microstructure can be designed by controlling the depth of the etching and the size of the waist.

    摘要翻译: 描述了在单晶硅板上形成热隔离微结构的方法,该方法使用混合干 - 湿蚀刻技术,当被控制时,可以产生微结构,而没有任何硅粘附在其下,微结构具有小质量的硅 粘附在下面,以及通过腰部硅体仍然附着在单晶硅板上的微结构。 当用腰部硅体制造微结构时,可以通过控制蚀刻深度和腰部尺寸来设计微结构的热隔离。

    ETCHING TECHNIQUE FOR CREATION OF THERMALLY-ISOLATED MICROSTRUCTURES
    3.
    发明申请
    ETCHING TECHNIQUE FOR CREATION OF THERMALLY-ISOLATED MICROSTRUCTURES 有权
    用于创建热分离微结构的蚀刻技术

    公开(公告)号:US20110314435A1

    公开(公告)日:2011-12-22

    申请号:US13091417

    申请日:2011-04-21

    IPC分类号: G06F17/50

    摘要: There is described a method for creating a thermally-isolated microstructure on a slab of mono-crystalline silicon which uses a hybrid dry-then-wet etch technique that when controlled, can produce microstructures without any silicon adhering underneath, microstructures having small masses of silicon adhering underneath, and microstructures that are still attached to the slab of mono-crystalline silicon via a waisted silicon body. When creating the microstructures with a waisted silicon body, the thermal isolation of the microstructure can be designed by controlling the depth of the etching and the size of the waist.

    摘要翻译: 描述了在单晶硅板上形成热隔离微结构的方法,该方法使用混合干 - 湿蚀刻技术,当被控制时,可以产生微结构,而没有任何硅粘附在其下,微结构具有小质量的硅 粘附在下面,以及通过腰部硅体仍然附着在单晶硅板上的微结构。 当用腰部硅体制造微结构时,可以通过控制蚀刻深度和腰部尺寸来设计微结构的热隔离。

    Etching technique for creation of thermally-isolated microstructures
    4.
    发明授权
    Etching technique for creation of thermally-isolated microstructures 有权
    用于创建热隔离微结构的蚀刻技术

    公开(公告)号:US07951721B2

    公开(公告)日:2011-05-31

    申请号:US11667008

    申请日:2005-11-10

    IPC分类号: H01L21/461

    摘要: There is described a method for creating a thermally-isolated microstructure on a slab of mono-crystalline silicon which uses a hybrid dry-then-wet etch technique that when controlled, can produce microstructures without any silicon adhering underneath, microstructures having small masses of silicon adhering underneath, and microstructures that are still attached to the slab of mono-crystalline silicon via a waisted silicon body. When creating the microstructures with a waisted silicon body, the thermal isolation of the microstructure can be designed by controlling the depth of the etching and the size of the waist.

    摘要翻译: 描述了在单晶硅板上形成热隔离微结构的方法,该方法使用混合干 - 湿蚀刻技术,当被控制时,可以产生微结构,而没有任何硅粘附在其下,微结构具有小质量的硅 粘附在下面,以及通过腰部硅体仍然附着在单晶硅板上的微结构。 当用腰部硅体制造微结构时,可以通过控制蚀刻深度和腰部尺寸来设计微结构的热隔离。

    METHOD FOR THE DISPLAY OF PROCESS INFORMATION FOR A DATA PROCESSING EQUIPMENT AS WELL AS DATA PROCESSING SYSTEM
    5.
    发明申请
    METHOD FOR THE DISPLAY OF PROCESS INFORMATION FOR A DATA PROCESSING EQUIPMENT AS WELL AS DATA PROCESSING SYSTEM 审中-公开
    用于数据处理设备的过程信息的显示方法作为数据处理系统

    公开(公告)号:US20080309661A1

    公开(公告)日:2008-12-18

    申请号:US11852013

    申请日:2007-09-07

    申请人: Jens Urban

    发明人: Jens Urban

    IPC分类号: G06T15/00

    摘要: A method for the display of process information for a data processing equipment shall enable a particularly simplified and flexible processing, even of complex datasets, based on situation or problem-specific evaluation rules. For this purpose, according to the invention, control data defining the rules for the evaluation of the diagnostic data are fed to an evaluation module, and the evaluation module effects, by means of the rules transmitted by the control data, an evaluation of the diagnostic data by means of which display data suitable for being output on a display device are generated.

    摘要翻译: 用于显示数据处理设备的处理信息的方法应使得能够基于情况或特定于特定的评估规则的复杂数据集进行特别简化和灵活的处理。 为此,根据本发明,将定义用于诊断数据的评估的规则的控制数据馈送到评估模块,并且评估模块通过由控制数据发送的规则来影响诊断的评估 生成适合于在显示装置上输出的显示数据的数据。