Method For Producing Carbon Nanotube Transistor And Carbon Nanotube Transistor Thereby
    2.
    发明申请
    Method For Producing Carbon Nanotube Transistor And Carbon Nanotube Transistor Thereby 审中-公开
    因此,生产碳纳米管晶体管和碳纳米管晶体管的方法

    公开(公告)号:US20100044679A1

    公开(公告)日:2010-02-25

    申请号:US12332629

    申请日:2008-12-11

    摘要: The present invention relates to a method of manufacturing a carbon nanotube transistor in which a carbon nanotube channel is formed between a source electrode and a drain electrode and a gate electrode is formed at one side of the carbon nanotube channel, the method comprising the steps of: (a) forming the carbon nanotube channel on a substrate; (b) electrically connecting the source electrode and the drain electrode to both ends of the carbon nanotube channel, respectively; and (c) applying a stress voltage across the source electrode and the drain electrode to remove metallicity of the carbon nanotube channel.According to the method of manufacturing a carbon nanotube transistor of the present invention, a metallic part can be selectively removed from a carbon nanotube which is used as a channel of a transistor and has metallic properties and semiconductor properties mixed with each other.

    摘要翻译: 本发明涉及一种制造碳纳米管晶体管的方法,其中在源电极和漏极之间形成碳纳米管通道,并且在碳纳米管通道的一侧形成栅电极,该方法包括以下步骤: :(a)在基板上形成碳纳米管通道; (b)分别将源电极和漏极电连接到碳纳米管通道的两端; 和(c)在源电极和漏电极两端施加应力电压以去除碳纳米管通道的金属性。 根据本发明的碳纳米管晶体管的制造方法,可以从用作晶体管的沟道的碳纳米管中选择性地除去金属部分,并且具有彼此混合的金属性质和半导体特性。