公开(公告)号：US07196925B1

公开(公告)日：2007-03-27

申请号：US10927583

申请日：2004-08-26

Applicant: Joseph Tzou ,  Jithender Majjiga ,  Morgan Whately ,  Thinh Tran

Inventor： Joseph Tzou ,  Jithender Majjiga ,  Morgan Whately ,  Thinh Tran

IPC: G11C11/00

CPC classification number: G11C11/413

Abstract: A memory device can include a group of memory cells, which can be arranged in a column (100) that receives power by way of a first cell supply nodes (106-0 to 106-m). A current limiter (110) can be situated between first cell supply nodes (106-0 to 106-m) and a power supply (VH), and limit a current (llimit) to less than a latch-up holding current (lhold_lu) for the group of memory cells (100). In a particle event, such as an α-particle strike, a current limiter (110) can prevent a latch-up holding current (lhold_lu) from developing, thus preventing latch-up from occurring. Current limiter (110) can include p-channel transistors and/or resistors, and thus consume a relatively small area of the memory device.

Abstract translation: 存储器设备可以包括一组存储器单元，其可以被布置在通过第一单元电源节点（106-0至106-m）接收电力的列（100）中。 电流限制器（110）可以位于第一单元电源节点（106-0至106-m）和电源（VH）之间，并将电流（限制）限制为小于闭锁保持电流（lhold_lu） 用于存储单元组（100）。 在诸如α粒子撞击的粒子事件中，限流器（110）可以防止闩锁保持电流（lhold_lu）发展，从而防止发生闩锁。 限流器（110）可以包括p沟道晶体管和/或电阻器，因此消耗存储器件的相对小的面积。