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    Method for producing differently doped semiconductors
    1.
    发明授权
    Method for producing differently doped semiconductors 有权

    公开(公告)号：US09887313B2

    公开(公告)日：2018-02-06

    申请号：US15307689

    申请日：2015-04-17

    申请人： Christoph Mader ,  Christian Guenther ,  Joachim Erz ,  Susanne Christine Martens ,  Jasmin Lehmkuhl ,  Stephan Traut ,  Odo Wunnicke

    发明人： Christoph Mader ,  Christian Guenther ,  Joachim Erz ,  Susanne Christine Martens ,  Jasmin Lehmkuhl ,  Stephan Traut ,  Odo Wunnicke

    IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/22 ,  H01L21/228

    CPC分类号： H01L31/1804 ,  H01L21/2225 ,  H01L21/228 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

    摘要： The present invention relates to a liquid-phase method for doping a semiconductor substrate, characterized in that a first composition containing at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least one second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the second composition, where the one or more region(s) coated with the first composition and the one or more region(s) coated with the second composition are different and do not overlap significantly and where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; the regions of the surface of the semiconductor substrate coated with the first composition and with the second composition are each fully or partly activated; optionally, the unactivated regions of the surface of the semiconductor substrate coated with the first composition and with the second composition are each oxidized; and the semiconductor substrate is heated to a temperature at which the dopants diffuse out of the coating into the semiconductor substrate. The invention further relates to the semiconductor obtainable by the method and to the use thereof, especially in the production of solar cells.

    METHOD FOR PRODUCING DIFFERENTLY DOPED SEMICONDUCTORS
    2.
    发明申请
    METHOD FOR PRODUCING DIFFERENTLY DOPED SEMICONDUCTORS 有权
    生产不同掺杂半导体的方法

    公开(公告)号：US20170054050A1

    公开(公告)日：2017-02-23

    申请号：US15307689

    申请日：2015-04-17

    申请人： CHRISTOPH MADER ,  Christian GUENTHER ,  Joachim ERZ ,  Susanne Christine MARTENS ,  Jasmin LEHMKUHL ,  Stephan TRAUT ,  Odo WUNNICKE

    发明人： CHRISTOPH MADER ,  Christian GUENTHER ,  Joachim ERZ ,  Susanne Christine MARTENS ,  Jasmin LEHMKUHL ,  Stephan TRAUT ,  Odo WUNNICKE

    IPC分类号： H01L31/18

    CPC分类号： H01L31/1804 ,  H01L21/2225 ,  H01L21/228 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

    摘要： The present invention relates to a liquid-phase method for doping a semiconductor substrate, characterized in that a first composition containing at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least one second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the second composition, where the one or more region(s) coated with the first composition and the one or more region(s) coated with the second composition are different and do not overlap significantly and where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; the regions of the surface of the semiconductor substrate coated with the first composition and with the second composition are each fully or partly activated; optionally, the unactivated regions of the surface of the semiconductor substrate coated with the first composition and with the second composition are each oxidized; and the semiconductor substrate is heated to a temperature at which the dopants diffuse out of the coating into the semiconductor substrate. The invention further relates to the semiconductor obtainable by the method and to the use thereof, especially in the production of solar cells.

    摘要翻译： 本发明涉及一种用于掺杂半导体衬底的液相方法，其特征在于，将包含至少一种第一掺杂剂的第一组合物施加到半导体衬底的表面的一个或多个区域，以便产生一个或多个 涂覆有第一组合物的半导体衬底的表面的区域; 将包含至少一种第二掺杂剂的第二组合物施加到半导体衬底的表面的一个或多个区域，以便产生涂覆有第二组合物的半导体衬底的表面的一个或多个区域，其中 涂覆有第一组合物的一个或多个区域和涂覆有第二组合物的一个或多个区域是不同的，并且不显着重叠，并且其中第一掺杂剂是n型掺杂剂，并且第二掺杂剂是 p型掺杂剂，反之亦然; 涂覆有第一组合物和第二组合物的半导体衬底的表面的区域各自被全部或部分活化; 任选地，涂覆有第一组合物和第二组合物的半导体衬底的表面的未活化区域各自被氧化; 并且将半导体衬底加热到​​掺杂剂从涂层扩散到半导体衬底内的温度。 本发明还涉及通过该方法获得的半导体及其用途，特别是在太阳能电池的制造中。