公开(公告)号：US20050287772A1

公开(公告)日：2005-12-29

申请号：US11145174

申请日：2005-06-06

申请人： Till Schlosser ,  Joachim Nutzel

发明人： Till Schlosser ,  Joachim Nutzel

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/36 ,  H01L29/786 ,  H01L31/20

CPC分类号： H01L29/66795 ,  H01L29/785 ,  H01L29/78645

摘要： Process for producing a web of a semiconductor material The invention relates to a process for producing two webs of a semiconductor material, in which a sacrificial web of a first material is produced on a semiconductor substrate, in which the first material is selected in such a way that the crystal structure of the semiconductor substrate is substantially transferred to the sacrificial web, in which the two webs of a semiconductor material are deposited on two opposite side walls of the sacrificial web, in which the crystal structure of the sacrificial web is substantially transferred to the crystal structure of the webs, and in which the sacrificial webs are then removed.

摘要翻译： 用于制造半导体材料的网的方法本发明涉及一种用于生产半导体材料的两个幅材的方法，其中在半导体衬底上产生第一材料的牺牲幅材，其中第一材料在这种 半导体衬底的晶体结构基本转移到牺牲幅材的方式，其中半导体材料的两个网状物沉积在牺牲幅材的两个相对的侧壁上，其中牺牲幅材的晶体结构基本上被转移 到网的晶体结构，然后去除牺牲性网。