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公开(公告)号:US08289762B2
公开(公告)日:2012-10-16
申请号:US12589977
申请日:2009-10-30
申请人: Derchang Kau , Johannes J. Kalb , Brett Klehn
发明人: Derchang Kau , Johannes J. Kalb , Brett Klehn
CPC分类号: G11C13/0004 , G11C13/0064 , G11C13/0069 , G11C2013/0052 , G11C2013/008 , G11C2013/0092
摘要: Double-pulse write for phase change memory including: writing a phase change material from a high RESET state to a weakened RESET state with a first step, writing the phase change material from the weakened RESET state to a SET state with a second step, the second step having a lower current than the first step, verifying a parameter of the phase change material wherein if the parameter is higher than a target for a SET state, then repeating the writing with the first step, the writing with the second step, and the verifying until the parameter is lower than the target wherein a current for the first step is decreased by a decrement with each iteration without becoming lower than a current for the second step.
摘要翻译: 用于相变存储器的双脉冲写入包括:通过第一步将相位改变材料从高RESET状态写入弱化的RESET状态,将相变材料从弱化的RESET状态写入到第二步的SET状态, 第二步骤具有比第一步骤低的电流,验证相变材料的参数,其中如果参数高于用于SET状态的目标,则重复第一步骤的写入,用第二步骤的写入,以及 直到参数低于目标的验证,其中第一步骤的电流通过每次迭代而减小递减而不降低到用于第二步骤的电流。