公开(公告)号：US5198676A

公开(公告)日：1993-03-30

申请号：US767027

申请日：1991-09-27

申请人： Victor M. Benveniste ,  Peter L. Kellerman ,  John J. Schussler

发明人： Victor M. Benveniste ,  Peter L. Kellerman ,  John J. Schussler

IPC分类号： G01T1/29 ,  C23C14/48 ,  H01J37/04 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J2237/24465 ,  H01J2237/31703

摘要： An ion beam intensity and emittance measuring system. A substrate supports conductive zones or regions that are impacted by an ion beam. Periodically the conductive regions are discharged through an integrator circuit which produces an output corresponding to the charge buildup on the conductive region. By determining the charge for multiple such regions impacted by an ion beam, a two-dimensional mapping of ion beam intensity vs. position is obtained on essentially a real-time basis. An emittance mask is also placed over the substrate and a measure of the emittance or spread of the ion beam is obtained.