Variable density and variable persistent organic memory devices, methods, and fabrication
    1.
    发明授权
    Variable density and variable persistent organic memory devices, methods, and fabrication 有权
    可变密度和可变持久性有机存储器件,方法和制造

    公开(公告)号:US07273766B1

    公开(公告)日:2007-09-25

    申请号:US11034071

    申请日:2005-01-12

    IPC分类号: H01L21/00

    摘要: An organic memory device comprising two electrodes having a selectively conductive decay media between the two electrodes provides a capability to control a persistence level for information stored in an organic memory cell. A resistive state of the cell controls a conductive decay rate of the cell. A high and/or low resistive state can provide a fast and/or slow rate of conductive decay. One aspect of the present invention can have a high resistive state equating to an exponential conductive decay rate. Another aspect of the present invention can have a low resistive state equating to a logarithmic conductive decay rate. Yet another aspect relates to control of an organic memory device by determining a power state and setting a resistive state of an organic memory cell based upon a current power state and/or an imminent power state.

    摘要翻译: 包括在两个电极之间具有选择性导电衰减介质的两个电极的有机存储器件提供了控制存储在有机存储器单元中的信息的持久性水平的能力。 电池的电阻状态控制电池的导电衰减速率。 高和/或低电阻状态可以提供快速和/或慢速的导电衰减。 本发明的一个方面可以具有等于指数导电衰减速率的高电阻状态。 本发明的另一方面可以具有等于对数导电衰减速率的低电阻状态。 另一方面涉及通过基于当前功率状态和/或迫在眉睫的功率状态确定有功存储器单元的功率状态和设置电阻状态来控制有机存储器件。