公开(公告)号：US06287947B1

公开(公告)日：2001-09-11

申请号：US09327948

申请日：1999-06-08

申请人： Michael J. Ludowise ,  Steven A. Maranowski ,  Daniel A. Steigerwald ,  Jonathan Joseph Wierer, Jr.

发明人： Michael J. Ludowise ,  Steven A. Maranowski ,  Daniel A. Steigerwald ,  Jonathan Joseph Wierer, Jr.

IPC分类号： H01L2128

CPC分类号： H01L33/42 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01L2933/0016 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341

摘要： A method of forming a light-transmissive contact on a p-type Gallium nitride (GaN) layer of an optoelectronic device includes in one embodiment, introducing a selected metal in an oxidized condition, rather than oxidizing the metal only after it has been deposited on the surface of the p-type GaN layer. In some applications, the oxidized metal provides sufficient lateral conductivity to eliminate the conventional requirement of a second highly conductive contact metal, such as gold. If the second contact metal is desired, an anneal in an oxygen-free environment is performed after deposition of the second layer. The anneal causes the second metal to penetrate the oxidized metal and to fuse to the surface of the p-type GaN layer. In a second embodiment, the oxidation occurs only after at least one of the two metals is deposited on the surface of the p-type GaN layer. In one application of the second embodiment, the two metals are deposited and the oxidation occurs in an environment that includes both water vapor and oxygen gas. In an alternative application of the second embodiment, the first metallic layer is deposited and then oxidized throughout its depth. The second material, such as gold, is evaporated on the first material and a re-anneal step is performed to drive the second metal through the oxidized first metal. In any of the applications of either embodiment, a pattern of windows may be formed in the resulting contact structure or in additional layers that are formed thereon.

摘要翻译： 在光电子器件的p型氮化镓（GaN）层上形成透光接触的方法包括在一个实施方案中，将所选择的金属引入氧化条件，而不是仅在其沉积之后氧化金属 p型GaN层的表面。 在一些应用中，氧化金属提供足够的横向传导性以消除第二高导电性接触金属（例如金）的常规要求。 如果需要第二接触金属，则在沉积第二层之后执行在无氧环境中的退火。 退火使第二金属穿透氧化金属并熔合到p型GaN层的表面。 在第二实施方案中，仅在两种金属中的至少一种沉积在p型GaN层的表面上之后才发生氧化。 在第二实施例的一个应用中，沉积了两种金属，并且在包括水蒸气和氧气的环境中发生氧化。 在第二实施例的替代应用中，第一金属层被沉积​​，然后在整个深度被氧化。 第二种材料，例如金，在第一种材料上被蒸发，并且进行再退火步骤以通过氧化的第一金属驱动第二金属。 在任一实施例的任何应用中，可以在所得到的接触结构中或在其上形成的附加层中形成窗口图案。