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公开(公告)号：US12119426B2
公开(公告)日：2024-10-15
申请号：US17301578
申请日：2021-04-08
发明人： Shaohua Huang , Xiaoqiang Zeng , Canyuan Zhang , Jianfeng Yang
CPC分类号： H01L33/14 , H01L33/005 , H01L33/20 , H01L33/382
摘要： A light emitting device includes at least one light emitting unit that includes an insulating layer, a first electrically conductive layer, and a semiconductor layer structure having at least one recess. The first electrically conductive layer and the insulating layer extend into the recess. A contact area between a conductive protrusion portion of the first electrically conductive layer and a first-type semiconductor layer of the semiconductor layer structure is larger than 1.5% of an area of a bottom surface of the first-type semiconductor layer. A method for producing the light emitting device is also disclosed.
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2.发明公开公开(公告)号：US20240145633A1
公开(公告)日：2024-05-02
申请号：US18279645
申请日：2022-02-15
CPC分类号： H01L33/385 , H01L33/14 , H01L33/20 , H01L33/382 , H01L33/40 , H01L2933/0016
摘要： In an embodiment an optoelectronic semiconductor component includes a layer stack having a side face or a plurality of side faces including a first side region delimiting a first semiconductor region sideways and a second side region partially delimiting a second side region sideways and a first main face and a second main face lying opposite the first main face, the one or more side faces connecting the first main face and the second main face to one another. The component further includes a first contact configured for electrical contacting the first semiconductor region, a second contact configured for the electrical contacting of the second semiconductor region and a dielectric layer arranged between the second contact and the layer stack, wherein the second contact is configured for horizontal current injection into the second semiconductor region.
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公开(公告)号：US20240113254A1
公开(公告)日：2024-04-04
申请号：US18541090
申请日：2023-12-15
发明人： Yung-Ling LAN , Chan-Chan LING , Chi-Ming TSAI , Chia-Hung CHANG
摘要： A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.
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公开(公告)号：US20240079521A1
公开(公告)日：2024-03-07
申请号：US18261498
申请日：2022-01-19
发明人： Ivar TANGRING
CPC分类号： H01L33/14 , H01L33/20 , H01L33/382 , H01L33/46 , H01L33/505 , H01L33/62
摘要： An optoelectronic semiconductor component may include a semiconductor layer stack configured to generate electromagnetic radiation. The semiconductor layer stack may be arranged over a substrate and structured to form a mesa, so that the semiconductor layer stack is not present in an edge region of the substrate. The component may include a converter element on a side of the semiconductor layer stack that is remote from the substrate. The component may further include a gold layer over the edge region of the substrate in an arrangement plane between the substrate and the semiconductor layer stack.
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公开(公告)号：US11923478B2
公开(公告)日：2024-03-05
申请号：US17582201
申请日：2022-01-24
申请人： LUMEOVA, INC.
IPC分类号： H04B10/00 , H01L31/167 , H01L33/00 , H01L33/04 , H01L33/06 , H01L33/14 , H01L33/30 , H04B10/11 , H04B10/114 , H04B10/116 , H04B10/40 , H04B10/50 , H04B10/60 , H01L25/16 , H01L27/15 , H01L33/28 , H04H20/71
CPC分类号： H01L33/14 , H01L31/167 , H01L33/0025 , H01L33/04 , H01L33/06 , H01L33/145 , H01L33/30 , H04B10/11 , H04B10/1143 , H04B10/1149 , H04B10/116 , H04B10/40 , H04B10/502 , H04B10/60 , H01L25/167 , H01L27/156 , H01L33/28 , H04H20/71
摘要： Devices, systems, and methods for providing wireless personal area networks (PANs) and local area networks (LANs) using visible and near-visible optical spectrum. Various constructions and material selections are provided herein. According to one embodiment, a free space optical (FSO) communication apparatus includes a digital data port, an array of light-emitting diodes (LEDs) each configured to have a transient response time of less than 500 picoseconds (ps), and current drive circuitry coupled between the digital data port and the array of LEDs.
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公开(公告)号：US11916166B2
公开(公告)日：2024-02-27
申请号：US17053805
申请日：2019-05-08
申请人： Osram OLED GmbH
发明人： Roland Heinrich Enzmann , Christian Mueller , Stefan Barthel , Vanessa Eichinger , Marc Christian Nenstiel , Lorenzo Zini
CPC分类号： H01L33/14 , H01L25/167 , H01L33/005 , H01L33/382 , H01L33/62 , H01L33/642 , H01L2933/0016 , H01L2933/0066
摘要： An optoelectronic device may include an optoelectronic semiconductor chip that is configured to emit electromagnetic radiation. The chip may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and a plurality of electrical contact elements. The first current spreading layer may be arranged on a side of the second semiconductor layer facing away from the first semiconductor layer. The plurality of electrical contact elements may electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer may be electrically connected to the second semiconductor layer. The second current spreading layer may be arranged between the first current spreading layer and the second semiconductor layer where an insulating layer insulates a first electrical contact element and a second electrical contact element from the second current spreading layer.
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公开(公告)号：US20240055556A1
公开(公告)日：2024-02-15
申请号：US18486029
申请日：2023-10-12
申请人： LG Display Co., Ltd.
发明人： JungSun BEAK , Seongjoo LEE
IPC分类号： H01L33/10 , H01L33/60 , H01L33/14 , H10K59/122 , H10K59/173
CPC分类号： H01L33/10 , H01L33/60 , H01L33/14 , H10K59/122 , H10K59/173
摘要： There is provided a display device. The display device includes an optical structure disposed to increase the amount of light emitted from a light-emitting diode; and a bank coupled with the optical structure.
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公开(公告)号：US11848401B2
公开(公告)日：2023-12-19
申请号：US18096628
申请日：2023-01-13
发明人： Yung-Ling Lan , Chan-Chan Ling , Chi-Ming Tsai , Chia-Hung Chang
摘要： A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.
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公开(公告)号：US20230402571A1
公开(公告)日：2023-12-14
申请号：US18225643
申请日：2023-07-24
发明人： Jong Min JANG , Chang Yeon KIM
CPC分类号： H01L33/382 , H01L33/14 , H01L27/156 , H01L33/387 , H01L25/0756 , H01L33/08 , H01L33/06
摘要： A light emitting device including a first light emitting part including a first n-type semiconductor layer, a first active layer, a first p-type semiconductor layer, and a first transparent electrode, a second light emitting part disposed over the first light emitting part and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode, and a third light emitting part disposed over the second light emitting part and including a third n-type semiconductor layer, a third active layer, a third p-type semiconductor layer, and a third transparent electrode, in which the light emitting device has substantially a quadrangular shape when viewed from the top, and has first to fourth corners.
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10.发明授权公开(公告)号：US11843084B2
公开(公告)日：2023-12-12
申请号：US16132831
申请日：2018-09-17
发明人： Martin F. Schubert
IPC分类号： H01L33/62 , H01L33/10 , H01L33/42 , H01L33/40 , H01L33/44 , H01L33/60 , H01L33/38 , H01L33/46 , H01L33/36 , H01L33/06 , H01L33/14 , H01L33/32 , H10K50/814
CPC分类号： H01L33/62 , H01L33/06 , H01L33/10 , H01L33/14 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/60 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066 , H10K50/814 , H01L2924/0002 , H01L2924/00
摘要： Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.
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