公开(公告)号：US20050274978A1

公开(公告)日：2005-12-15

申请号：US11138951

申请日：2005-05-26

申请人： Dimitri Antoniadis ,  Judy Hoyt ,  Jongwan Jung ,  Shaofeng Yu

发明人： Dimitri Antoniadis ,  Judy Hoyt ,  Jongwan Jung ,  Shaofeng Yu

IPC分类号： H01L21/8238 ,  H01L29/10 ,  H01L29/49 ,  H01L29/78 ,  H01L31/0328

CPC分类号： H01L21/823807 ,  H01L21/823828 ,  H01L29/1054 ,  H01L29/4966 ,  H01L29/78

摘要： Strained Si/strained SiGe dual-channel layer substrate provides mobility advantage and when used as a CMOS substrate enables single workfunction metal-gate electrode technology. A single metal electrode with workfunction of 4.5 eV produces near ideal CMOS performance on a dual-channel layer substrate that consists sequentially of a silicon wafer, an epitaxially grown 30% Ge relaxed SiGe layer, a compressively strained 60% Ge layer, and a tensile-strained Si cap layer.

摘要翻译： 应变Si /应变SiGe双沟道层衬底提供了移动优势，并且当用作CMOS衬底时，可实现单功能金属栅电极技术。 具有4.5eV功函数的单个金属电极在双通道层衬底上产生接近理想的CMOS性能，其依次由硅晶片，外延生长的30％Ge弛豫SiGe层，压缩应变的60％Ge层和拉伸 有限硅层。