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公开(公告)号：US07088030B2
公开(公告)日：2006-08-08
申请号：US10839844
申请日：2004-05-06
CPC分类号： H02N1/008 , B81B2201/033 , B81C1/00595 , Y10S438/942
摘要： A high-aspect-ratio-microstructure (HARM) is provided. The structure includes: a substrate; a lower structure with a comb shape fixedly mounted on said substrate and having first plural comb fingers, wherein each of the first plural comb fingers has a thin slot thereon; an upper structure with a comb shape having second plural comb fingers, wherein the lower structure and the upper structure have a height difference therebetween so as to form an uneven surface; and a lateral strengthening structure formed at vertically peripheral walls of the first plural comb fingers and the second plural comb fingers for protecting the plural first and second comb fingers.
摘要翻译： 提供了高纵横比微结构（HARM）。 该结构包括：基底; 具有固定地安装在所述基板上并具有第一多个梳齿的梳形的下部结构，其中所述第一多个梳齿中的每一个在其上具有薄的狭槽; 具有梳形的具有第二多个梳齿的上部结构，其中下部结构和上部结构之间具有高度差以形成不平坦表面; 以及形成在第一多个梳齿的垂直周壁上的横向加强结构和用于保护多个第一和第二梳齿的第二多个梳齿。
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公开(公告)号：US07247247B2
公开(公告)日：2007-07-24
申请号：US10839990
申请日：2004-05-06
IPC分类号： B81C1/00
CPC分类号： H02N1/008 , B81B2201/033 , B81C1/00595 , Y10S438/942
摘要： A selective etching method with lateral protection function is provided. The steps includes: (a) providing a substrate; (b) forming a plurality of tunnels; (c) forming a lateral strengthening structure at a peripheral wall of the tunnels; (d) removing a bottom portion of the lateral strengthening structure, and a part of the substrate by an etching process so as to form a lower structure and expose an unstrengthened structure; and (f) etching the unstrengthened structure laterally so as to form an upper structure.
摘要翻译： 提供了具有侧向保护功能的选择性蚀刻方法。 步骤包括：（a）提供基底; （b）形成多个隧道; （c）在隧道的周壁处形成横向加固结构; （d）通过蚀刻工艺去除侧向强化结构的底部和基底的一部分，以形成下部结构并暴露未加强的结构; 和（f）横向蚀刻非强化结构以形成上部结构。
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