公开(公告)号：US06279503B1

公开(公告)日：2001-08-28

申请号：US09183599

申请日：1998-10-29

申请人： Baik-soon Choi ,  Jung-il An ,  Jin-sung Kim ,  Jung-ki Kim

发明人： Baik-soon Choi ,  Jung-il An ,  Jin-sung Kim ,  Jung-ki Kim

IPC分类号： C23C1600

CPC分类号： C23C16/4405

摘要： There is provided a method of optimizing recipe of in-situ cleaning process for process chamber after a specific process on semiconductor wafers by using Residual Gas Analyzer Quadrupole Mass Spectrometer (RGA-QMS). According to the present invention, a Chemical Vapor Deposition (CVD) apparatus for manufacturing semiconductor devices comprises: a process chamber; process gas supply line for supplying process gas into the process chamber; a waste-gas exhaust line for removing the waste-gas from the process chamber after process; a supply line for supplying a CiF3 gas into the process chamber; a sampling manifold for sampling the gas inside process chamber by using pressure difference; and RGA-QMS for analyzing the sampling gas, and the optimization of the end points according to gas flow, pressure, and temperature of the cleaning process for the process chamber is achieved through the analysis by above RGA-QMS.

摘要翻译： 提供了一种通过使用残留气体分析仪四极质谱仪（RGA-QMS）在半导体晶片上的特定工艺之后优化处理室的原位清洗工艺的方法。 根据本发明，用于制造半导体器件的化学气相沉积（CVD）装置包括：处理室; 工艺气体供应管线，用于将处理气体供应到处理室中; 用于从处理室中除去废气的废气排放管线; 用于将CiF3气体供应到处理室中的供应管线; 采样歧管，用于通过使用压力差来对处理室内的气体进行采样; 和用于分析采样气体的RGA-QMS，并通过上述RGA-QMS的分析实现了根据工艺室清洁过程的气体流量，压力和温度对端点进行优化。

公开(公告)号：US06432838B1

公开(公告)日：2002-08-13

申请号：US09496315

申请日：2000-02-01

申请人： Baik-soon Choi ,  Jung-il An ,  Jin-sung Kim ,  Jung-ki Kim

发明人： Baik-soon Choi ,  Jung-il An ,  Jin-sung Kim ,  Jung-ki Kim

IPC分类号： H01L2131

CPC分类号： C23C16/4405

摘要： There is provided a method of optimizing recipe of in-situ cleaning process for process chamber after a specific process on semiconductor wafers by using Residual Gas Analyzer Quadrupole Mass Spectrometer (RGA-QMS). According to the present invention, a Chemical Vapor Deposition (CVD) apparatus for manufacturing semiconductor devices comprises: a process chamber; process gas supply line for supplying process gas into the process chamber; a waste-gas exhaust line for removing the waste-gas from the process chamber after process; a supply line for supplying a ClF3 gas into the process chamber; a sampling manifold for sampling the gas inside process chamber by using pressure difference; and RGA-QMS for analyzing the sampling gas, and the optimization of the end points according to gas flow, pressure, and temperature of the cleaning process for the process chamber is achieved through the analysis by above RGA-QMS.

摘要翻译： 提供了一种通过使用残留气体分析仪四极质谱仪（RGA-QMS）在半导体晶片上的特定工艺之后优化处理室的原位清洗工艺的方法。 根据本发明，用于制造半导体器件的化学气相沉积（CVD）装置包括：处理室; 工艺气体供应管线，用于将处理气体供应到处理室中; 用于从处理室中除去废气的废气排放管线; 用于将ClF 3气体供应到处理室中的供应管线; 采样歧管，用于通过使用压力差来对处理室内的气体进行采样; 和用于分析取样气体的RGA-QMS，并通过上述RGA-QMS的分析实现了根据工艺室清洁过程的气体流量，压力和温度对端点进行优化。

公开(公告)号：US06664119B2

公开(公告)日：2003-12-16

申请号：US09804635

申请日：2001-03-09

申请人： Baik-soon Choi ,  Jung-il An ,  Jin-sung Kim ,  Jung-ki Kim

发明人： Baik-soon Choi ,  Jung-il An ,  Jin-sung Kim ,  Jung-ki Kim

IPC分类号： H01L2166

CPC分类号： C23C16/4405

摘要： There is provided a method of optimizing recipe of in-situ cleaning process for process chamber after a specific process on semiconductor wafers by using Residual Gas Analyzer Quadrupole Mass Spectrometer (RGA-QMS) According to the present invention, a Chemical Vapor Deposition (CVD) apparatus for manufacturing semiconductor devices comprises: a process chamber; process gas supply line for supplying process gas into the process chamber; a waste-gas exhaust line for removing the waste-gas from the process chamber after process; a supply line for supplying a ClF3 gas into the process chamber; a sampling manifold for sampling the gas inside process chamber by using pressure difference; and RGA-QMS for analyzing the sampling gas, and the optimization of the end points according to gas flow, pressure, and temperature of the cleaning process for the process chamber is achieved through the analysis by above RGA-QMS.

摘要翻译： 提供了一种通过使用残留气体分析仪四极质谱仪（RGA-QMS）对半导体晶片进行特定处理后的处理室的现场清洁处理的优化方法。根据本发明，化学气相沉积（CVD） 用于制造半导体器件的设备包括：处理室; 工艺气体供应管线，用于将处理气体供应到处理室中; 用于从处理室中除去废气的废气排放管线; 用于将ClF 3气体供应到处理室中的供应管线; 采样歧管，用于通过使用压力差来对处理室内的气体进行采样; 和用于分析取样气体的RGA-QMS，并通过上述RGA-QMS的分析实现了根据工艺室清洁过程的气体流量，压力和温度对端点进行优化。