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    Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method, and method of optimizing recipe of cleaning process for process chamber
    1.
    发明授权
    Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method, and method of optimizing recipe of cleaning process for process chamber 有权
    用于制造半导体器件的化学气相沉积设备，其驱动方法和优化处理室清洗过程配方的方法

    公开(公告)号：US06432838B1

    公开(公告)日：2002-08-13

    申请号：US09496315

    申请日：2000-02-01

    申请人： Baik-soon Choi ,  Jung-il An ,  Jin-sung Kim ,  Jung-ki Kim

    发明人： Baik-soon Choi ,  Jung-il An ,  Jin-sung Kim ,  Jung-ki Kim

    IPC分类号： H01L2131

    CPC分类号： C23C16/4405

    摘要： There is provided a method of optimizing recipe of in-situ cleaning process for process chamber after a specific process on semiconductor wafers by using Residual Gas Analyzer Quadrupole Mass Spectrometer (RGA-QMS). According to the present invention, a Chemical Vapor Deposition (CVD) apparatus for manufacturing semiconductor devices comprises: a process chamber; process gas supply line for supplying process gas into the process chamber; a waste-gas exhaust line for removing the waste-gas from the process chamber after process; a supply line for supplying a ClF3 gas into the process chamber; a sampling manifold for sampling the gas inside process chamber by using pressure difference; and RGA-QMS for analyzing the sampling gas, and the optimization of the end points according to gas flow, pressure, and temperature of the cleaning process for the process chamber is achieved through the analysis by above RGA-QMS.

    摘要翻译： 提供了一种通过使用残留气体分析仪四极质谱仪（RGA-QMS）在半导体晶片上的特定工艺之后优化处理室的原位清洗工艺的方法。 根据本发明，用于制造半导体器件的化学气相沉积（CVD）装置包括：处理室; 工艺气体供应管线，用于将处理气体供应到处理室中; 用于从处理室中除去废气的废气排放管线; 用于将ClF 3气体供应到处理室中的供应管线; 采样歧管，用于通过使用压力差来对处理室内的气体进行采样; 和用于分析取样气体的RGA-QMS，并通过上述RGA-QMS的分析实现了根据工艺室清洁过程的气体流量，压力和温度对端点进行优化。

    Chemical vapor deposition apparatus for manufacturing semiconductor devices
    2.
    发明授权
    Chemical vapor deposition apparatus for manufacturing semiconductor devices 有权
    用于制造半导体器件的化学气相沉积设备

    公开(公告)号：US06279503B1

    公开(公告)日：2001-08-28

    申请号：US09183599

    申请日：1998-10-29

    申请人： Baik-soon Choi ,  Jung-il An ,  Jin-sung Kim ,  Jung-ki Kim

    发明人： Baik-soon Choi ,  Jung-il An ,  Jin-sung Kim ,  Jung-ki Kim

    IPC分类号： C23C1600

    CPC分类号： C23C16/4405

    摘要： There is provided a method of optimizing recipe of in-situ cleaning process for process chamber after a specific process on semiconductor wafers by using Residual Gas Analyzer Quadrupole Mass Spectrometer (RGA-QMS). According to the present invention, a Chemical Vapor Deposition (CVD) apparatus for manufacturing semiconductor devices comprises: a process chamber; process gas supply line for supplying process gas into the process chamber; a waste-gas exhaust line for removing the waste-gas from the process chamber after process; a supply line for supplying a CiF3 gas into the process chamber; a sampling manifold for sampling the gas inside process chamber by using pressure difference; and RGA-QMS for analyzing the sampling gas, and the optimization of the end points according to gas flow, pressure, and temperature of the cleaning process for the process chamber is achieved through the analysis by above RGA-QMS.

    摘要翻译： 提供了一种通过使用残留气体分析仪四极质谱仪（RGA-QMS）在半导体晶片上的特定工艺之后优化处理室的原位清洗工艺的方法。 根据本发明，用于制造半导体器件的化学气相沉积（CVD）装置包括：处理室; 工艺气体供应管线，用于将处理气体供应到处理室中; 用于从处理室中除去废气的废气排放管线; 用于将CiF3气体供应到处理室中的供应管线; 采样歧管，用于通过使用压力差来对处理室内的气体进行采样; 和用于分析采样气体的RGA-QMS，并通过上述RGA-QMS的分析实现了根据工艺室清洁过程的气体流量，压力和温度对端点进行优化。

    Chemical vapor deposition method for manufacturing semiconductor devices
    3.
    发明授权
    Chemical vapor deposition method for manufacturing semiconductor devices 有权
    用于制造半导体器件的化学气相沉积设备，其驱动方法和优化处理室清洗过程配方的方法

    公开(公告)号：US06664119B2

    公开(公告)日：2003-12-16

    申请号：US09804635

    申请日：2001-03-09

    申请人： Baik-soon Choi ,  Jung-il An ,  Jin-sung Kim ,  Jung-ki Kim

    发明人： Baik-soon Choi ,  Jung-il An ,  Jin-sung Kim ,  Jung-ki Kim

    IPC分类号： H01L2166

    CPC分类号： C23C16/4405

    摘要： There is provided a method of optimizing recipe of in-situ cleaning process for process chamber after a specific process on semiconductor wafers by using Residual Gas Analyzer Quadrupole Mass Spectrometer (RGA-QMS) According to the present invention, a Chemical Vapor Deposition (CVD) apparatus for manufacturing semiconductor devices comprises: a process chamber; process gas supply line for supplying process gas into the process chamber; a waste-gas exhaust line for removing the waste-gas from the process chamber after process; a supply line for supplying a ClF3 gas into the process chamber; a sampling manifold for sampling the gas inside process chamber by using pressure difference; and RGA-QMS for analyzing the sampling gas, and the optimization of the end points according to gas flow, pressure, and temperature of the cleaning process for the process chamber is achieved through the analysis by above RGA-QMS.

    摘要翻译： 提供了一种通过使用残留气体分析仪四极质谱仪（RGA-QMS）对半导体晶片进行特定处理后的处理室的现场清洁处理的优化方法。根据本发明，化学气相沉积（CVD） 用于制造半导体器件的设备包括：处理室; 工艺气体供应管线，用于将处理气体供应到处理室中; 用于从处理室中除去废气的废气排放管线; 用于将ClF 3气体供应到处理室中的供应管线; 采样歧管，用于通过使用压力差来对处理室内的气体进行采样; 和用于分析取样气体的RGA-QMS，并通过上述RGA-QMS的分析实现了根据工艺室清洁过程的气体流量，压力和温度对端点进行优化。

    DISPLAY APPARATUS
    5.
    发明申请
    DISPLAY APPARATUS 有权
    显示设备

    公开(公告)号：US20110187961A1

    公开(公告)日：2011-08-04

    申请号：US13082429

    申请日：2011-04-08

    申请人： Hyun-chul Jeong ,  Jae-hwan Chun ,  Jong-ho Won ,  Sung-won Chung ,  Jung-ki Kim ,  Sang-sun Han ,  Yu-kwan Kim ,  Jeong-ki Kim

    发明人： Hyun-chul Jeong ,  Jae-hwan Chun ,  Jong-ho Won ,  Sung-won Chung ,  Jung-ki Kim ,  Sang-sun Han ,  Yu-kwan Kim ,  Jeong-ki Kim

    IPC分类号： G02F1/1333

    CPC分类号： G06F1/1601 ,  H04N5/645

    摘要： A display apparatus includes a display module and a front case. The display module displays images. The display module includes a boss fixing member having a combination hole. The front case covers a first surface of the display module and has a first boss that is inserted into the combination hole to combine the front case to the display module. The first boss is formed at inside edges of the display module. The boss fixing member is positioned within the edges of the display module which define the outdimension of the display module.

    摘要翻译： 显示装置包括显示模块和前壳。 显示模块显示图像。 显示模块包括具有组合孔的凸台固定构件。 前壳体覆盖显示模块的第一表面，并且具有插入组合孔中的第一凸台，以将前壳体与显示模块组合。 第一凸台形成在显示模块的内边缘处。 凸台固定构件位于显示模块的边缘内，其限定显示模块的尺寸。

    Method of manufacturing semiconductor devices
    7.
    发明授权
    Method of manufacturing semiconductor devices 有权
    制造半导体器件的方法

    公开(公告)号：US06200903B1

    公开(公告)日：2001-03-13

    申请号：US09399189

    申请日：1999-09-20

    申请人： Sang-kuen Oh ,  Sung-kyu Han ,  Yeon-sang Hwang ,  Dong-ha Lim ,  Jung-ki Kim

    发明人： Sang-kuen Oh ,  Sung-kyu Han ,  Yeon-sang Hwang ,  Dong-ha Lim ,  Jung-ki Kim

    IPC分类号： H01L21302

    CPC分类号： H01L21/31155 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10852

    摘要： A semiconductor device is manufactured by forming a thin layer over a semiconductor substrate, coating photoresist on the thin layer, forming a photoresist pattern over the semiconductor substrate, injecting ions into the photoresist pattern so as to harden the photoresist pattern, and etching the thin layer by using the hardened photoresist pattern as an etch mask. The hardened photoresist pattern has an increased etch selectivity with respect to an underlying layer, allowing the use of thinner photoresist layers and improved etching.

    摘要翻译： 半导体器件通过在半导体衬底上形成薄层，在薄层上涂覆光致抗蚀剂，在半导体衬底上形成光致抗蚀剂图案，将光离子注入到光致抗蚀剂图案中以使光致抗蚀剂图案硬化，并且蚀刻薄层 通过使用硬化的光致抗蚀剂图案作为蚀刻掩模。 硬化的光致抗蚀剂图案相对于下层具有增加的蚀刻选择性，允许使用更薄的光致抗蚀剂层和改进的蚀刻。

    Side mold, backlight assembly having the same, method thereof, and liquid crystal display having the backlight assembly
    9.
    发明授权
    Side mold, backlight assembly having the same, method thereof, and liquid crystal display having the backlight assembly 有权
    具有相同的侧模，背光组件，其方法和具有背光组件的液晶显示器

    公开(公告)号：US08040457B2

    公开(公告)日：2011-10-18

    申请号：US11831085

    申请日：2007-07-31

    申请人： Jung-ki Kim ,  Jae-hwan Chun

    发明人： Jung-ki Kim ,  Jae-hwan Chun

    IPC分类号： G02F1/1335 ,  G09F13/04 ,  G09F13/08

    CPC分类号： G02F1/133608 ,  G02F1/133604

    摘要： A backlight assembly having lamp sockets and a side mold is provided. The backlight assembly includes a lamp emitting light, a lamp socket into which the lamp is inserted, and a side mold having at least one portion of a bottom surface thereof opened and including a supporting portion, a side wall formed at one side of the supporting portion, a sloping portion inclined downwardly at a side opposite to the supporting portion, and at least one socket connection portion receiving the lamp socket.

    摘要翻译： 提供具有灯插座和侧模的背光组件。 背光组件包括发光灯，灯插入其中的灯座，以及侧模具，其底表面的至少一部分被打开并包括支撑部分，侧壁形成在支撑件的一侧 部分，在与支撑部分相对的一侧向下倾斜的倾斜部分和容纳灯插座的至少一个插座连接部分。

    Method of stripping a wafer of its film with gas injected into a CVD apparatus in which the wafer is disposed
    10.
    发明授权
    Method of stripping a wafer of its film with gas injected into a CVD apparatus in which the wafer is disposed 有权
    用注入到其中设置晶片的CVD装置中的气体剥离其膜的晶片的方法

    公开(公告)号：US6015758A

    公开(公告)日：2000-01-18

    申请号：US140332

    申请日：1998-08-26

    申请人： Joong-il An ,  Kyung-su Kim ,  Jung-su Lim ,  Jung-ki Kim

    发明人： Joong-il An ,  Kyung-su Kim ,  Jung-su Lim ,  Jung-ki Kim

    IPC分类号： H01L21/205 ,  H01L21/00 ,  H01L21/306

    CPC分类号： H01L21/67017 ,  Y10S156/912

    摘要： A method for stripping a film from a wafer substrate includes the steps of inserting a boat holding the wafer into a processing chamber of a CVD apparatus, and injecting gas into the chamber, to thereby strip the wafer of its film. A typical film requiring stripping is a polysilicon film grown on an underlying oxide layer of the substrate. In this case, CIF.sub.3 is used to strip the polysilicon film without damaging the oxide layer. Accordingly, this method is applicable to the quality testing of semiconductor wafer films using a test wafer. In such quality testing a film is formed on a test wafer substrate at the same time the semiconductor wafer film is formed. The film of the test wafer is tested to evaluate the quality of the formation of the semiconductor wafer film. The test wafer can then be stripped within the chemical vapor deposition apparatus and thus can be reused soon thereafter.

    摘要翻译： 从晶片基板剥离膜的方法包括将保持晶片的舟状物插入CVD装置的处理室中并将气体注入到室中从而剥离其膜的晶片的步骤。 需要剥离的典型膜是在基底的下面的氧化物层上生长的多晶硅膜。 在这种情况下，CIF3用于剥离多晶硅膜而不损坏氧化物层。 因此，该方法适用于使用测试晶片的半导体晶片膜的质量测试。 在这种质量测试中，在形成半导体晶片膜的同时，在测试晶片衬底上形成膜。 测试测试晶片的膜以评估半导体晶片膜的形成质量。 然后可以在化学气相沉积设备内剥离测试晶片，因此可以在此之后重新使用。