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公开(公告)号：US09017493B2
公开(公告)日：2015-04-28
申请号：US13144538
申请日：2010-08-10
摘要： [Object] To provide a method of manufacturing a sputtering target and a sputtering target that are capable of achieving refinement and uniformity of crystal grains.[Solving Means] A method of manufacturing a sputtering target according to an embodiment of the present invention includes forging an ingot formed of metal by applying a stress in a first axis direction (z-axis direction) and a plane direction (xy-plane direction) orthogonal to the first axis direction. The ingot is additionally forged by applying a stress in a second axis direction (axial directions c11, c12, c21, c22) obliquely intersecting with a direction parallel to the first axis direction. The ingot is heat-treated at a temperature equal to or higher than a recrystallization temperature thereof. In such a manner, since slip deformation can be caused not only in the first axis direction and the plane direction orthogonal thereto but also in the second axis direction, the high density and uniformity of an internal stress can be achieved.
摘要翻译： 本发明提供能够实现晶粒细化和均匀性的溅射靶和溅射靶的制造方法。 本发明的实施方式的溅射靶的制造方法包括：通过在第一轴方向（z轴方向）和平面方向（xy面方向）上施加应力来锻造由金属形成的铸锭 ）与第一轴方向正交。 通过在与第一轴方向平行的方向倾斜地相交的第二轴方向（轴方向c11，c12，c21，c22）上施加应力来另外锻造锭。 在等于或高于其再结晶温度的温度下对锭进行热处理。 以这种方式，由于不仅在第一轴方向和与其正交的平面方向上，而且在第二轴线方向上都可能产生滑动变形，所以可以实现高密度和内部应力的均匀性。
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公开(公告)号：US20120132523A1
公开(公告)日：2012-05-31
申请号：US13144538
申请日：2010-08-10
摘要： [Object] To provide a method of manufacturing a sputtering target and a sputtering target that are capable of achieving refinement and uniformity of crystal grains.[Solving Means] A method of manufacturing a sputtering target according to an embodiment of the present invention includes forging an ingot formed of metal by applying a stress in a first axis direction (z-axis direction) and a plane direction (xy-plane direction) orthogonal to the first axis direction. The ingot is additionally forged by applying a stress in a second axis direction (axial directions c11, c12, c21, c22) obliquely intersecting with a direction parallel to the first axis direction. The ingot is heat-treated at a temperature equal to or higher than a recrystallization temperature thereof. In such a manner, since slip deformation can be caused not only in the first axis direction and the plane direction orthogonal thereto but also in the second axis direction, the high density and uniformity of an internal stress can be achieved.
摘要翻译： 本发明提供能够实现晶粒细化和均匀性的溅射靶和溅射靶的制造方法。 本发明的实施方式的溅射靶的制造方法包括：通过在第一轴方向（z轴方向）和平面方向（xy面方向）上施加应力来锻造由金属形成的铸块 ）与第一轴方向正交。 通过在与第一轴方向平行的方向倾斜地相交的第二轴方向（轴方向c11，c12，c21，c22）上施加应力来另外锻造锭。 在等于或高于其再结晶温度的温度下对锭进行热处理。 以这种方式，由于不仅在第一轴方向和与其正交的平面方向上，而且在第二轴线方向上都可能产生滑动变形，所以可以实现高密度和内部应力的均匀性。
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