公开(公告)号：US08048396B2

公开(公告)日：2011-11-01

申请号：US11792962

申请日：2005-12-12

申请人： Morio Yumura ,  Satoshi Ohshima ,  Junzo Yana ,  Kaori Fukuma

发明人： Morio Yumura ,  Satoshi Ohshima ,  Junzo Yana ,  Kaori Fukuma

IPC分类号： D01F9/12

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/06 ,  C01B2202/30 ,  C01B2202/36 ,  Y10S977/843

摘要： The objective of the present invention is to provide a process of producing single-walled carbon nanotubes, capable of producing single-walled carbon nanotubes with high purity. A process of producing single-walled carbon nanotubes according to the present invention includes feeding a feedstock including a hydrocarbon source, a metallocene, and a sulfur compound in a state of mist to a feeding zone where hydrogen gas flows at a linear velocity of 1-50 m/second wherein the amount of the hydrocarbon source is 0.01-0.2% by mass and the amount of the metallocene is 0.001-0.2% by mass based on the total amount of the hydrogen gas and the feedstock, and the amount by mass of the sulfur compound is ⅛-4 times as much as that of the metallocene; and making the hydrogen gas and the fed feedstock flow through a reaction zone with a temperature of 800-1000° C.

摘要翻译： 本发明的目的在于提供能够制造高纯度的单壁碳纳米管的单壁碳纳米管的制造方法。 根据本发明的单壁碳纳米管的制造方法包括：将含有烃源，茂金属和硫化合物的原料以雾化的状态向供给区域供给氢气以1〜 50m /秒，其中烃源的量为0.01-0.2质量％，金属茂的量相对于氢气和原料的总量为0.001-0.2质量％，并且质量 硫化合物为金属茂的4〜4倍; 并使氢气和进料的原料流过温度为800-1000℃的反应区。

公开(公告)号：US20080107587A1

公开(公告)日：2008-05-08

申请号：US11792962

申请日：2005-12-12

申请人： Morio Yumura ,  Satoshi Ohshima ,  Junzo Yana ,  Kaori Fukuma

发明人： Morio Yumura ,  Satoshi Ohshima ,  Junzo Yana ,  Kaori Fukuma

IPC分类号： D01F9/12

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/06 ,  C01B2202/30 ,  C01B2202/36 ,  Y10S977/843

摘要： The objective of the present invention is to provide a process of producing single-walled carbon nanotubes, capable of producing single-walled carbon nanotubes with high purity. A process of producing single-walled carbon nanotubes according to the present invention includes feeding a feedstock including a hydrocarbon source, a metallocene, and a sulfur compound in a state of mist to a feeding zone where hydrogen gas flows at a linear velocity of 1-50 m/second wherein the amount of the hydrocarbon source is 0.01-0.2% by mass and the amount of the metallocene is 0.001-0.2% by mass based on the total amount of the hydrogen gas and the feedstock, and the amount by mass of the sulfur compound is ⅛-4 times as much as that of the metallocene; and making the hydrogen gas and the fed feedstock flow through a reaction zone with a temperature of 800-1000° C.

摘要翻译： 本发明的目的在于提供能够制造高纯度的单壁碳纳米管的单壁碳纳米管的制造方法。 根据本发明的单壁碳纳米管的制造方法包括：将含有烃源，茂金属和硫化合物的原料以雾化的状态向供给区域供给氢气以1〜 50m /秒，其中烃源的量为0.01-0.2质量％，金属茂的量相对于氢气和原料的总量为0.001-0.2质量％，并且质量 硫化合物为金属茂的1/8-4倍; 并使氢气和进料的原料流过温度为800-1000℃的反应区。