-
公开(公告)号:US09004107B2
公开(公告)日:2015-04-14
申请号:US13591212
申请日:2012-08-21
IPC分类号: F16K11/20 , G05D16/20 , C23C16/455 , G05D7/06
CPC分类号: G05D16/2006 , C23C16/45561 , G05D7/0664 , Y10T137/0379 , Y10T137/7761 , Y10T137/87885
摘要: The present invention provides methods and apparatus for controlling gas flow to a semiconductor-processing chamber. The invention includes deactivating ratio setpoint feedback control in a flow ratio controller; initiating gas flow through the flow ratio controller; moving valves of the flow ratio controller to a preset position based on a stored position when an upstream pressure reaches a stored upstream pressure value, wherein the stored position and the stored upstream pressure value were stored during a prior process run; determining that steady state flow ratio controller output flows have been reached; and activating ratio setpoint feedback control in the flow ratio controller. Numerous additional features are disclosed.
摘要翻译: 本发明提供了用于控制到半导体处理室的气流的方法和装置。 本发明包括流量比控制器中的停用比率设定点反馈控制; 启动气流通过流量比控制器; 当上游压力达到存储的上游压力值时,基于存储位置,将流量比控制器的阀移动到预设位置,其中在先前的处理运行期间存储所存储的位置和存储的上游压力值; 确定稳态流量比控制器输出流量已达到; 和流量比控制器中的启动比设定点反馈控制。 公开了许多附加特征。
-
公开(公告)号:US20140053912A1
公开(公告)日:2014-02-27
申请号:US13591212
申请日:2012-08-21
IPC分类号: G05D16/20
CPC分类号: G05D16/2006 , C23C16/45561 , G05D7/0664 , Y10T137/0379 , Y10T137/7761 , Y10T137/87885
摘要: The present invention provides methods and apparatus for controlling gas flow to a semiconductor-processing chamber. The invention includes deactivating ratio setpoint feedback control in a flow ratio controller; initiating gas flow through the flow ratio controller; moving valves of the flow ratio controller to a preset position based on a stored position when an upstream pressure reaches a stored upstream pressure value, wherein the stored position and the stored upstream pressure value were stored during a prior process run; determining that steady state flow ratio controller output flows have been reached; and activating ratio setpoint feedback control in the flow ratio controller. Numerous additional features are disclosed.
摘要翻译: 本发明提供了用于控制到半导体处理室的气流的方法和装置。 本发明包括流量比控制器中的停用比率设定点反馈控制; 启动气流通过流量比控制器; 当上游压力达到存储的上游压力值时,基于存储位置,将流量比控制器的阀移动到预设位置,其中在先前的处理运行期间存储所存储的位置和存储的上游压力值; 确定稳态流量比控制器输出流量已达到; 和流量比控制器中的启动比设定点反馈控制。 公开了许多附加特征。
-