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公开(公告)号：US20190040528A1
公开(公告)日：2019-02-07
申请号：US16130919
申请日：2018-09-13
发明人： Purushottam Kumar , Hu Kang , Adrien LaVoie , Yi Chung Chiu , Frank L. Pasquale , Jun Qian , Chloe Baldasseroni , Shankar Swaminathan , Karl F. Leeser , David Charles Smith , Wei-Chih Lai
IPC分类号： C23C16/455
CPC分类号： C23C16/45527 , C23C16/45519 , C23C16/45536 , C23C16/45544 , C23C16/45561
摘要： The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.
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公开(公告)号：US20180291502A1
公开(公告)日：2018-10-11
申请号：US16008825
申请日：2018-06-14
发明人： Naoko KITAGAWA , Yuichi WADA
IPC分类号： C23C16/448 , H01L21/31 , C23C16/52 , C23C16/44
CPC分类号： C23C16/448 , C23C14/12 , C23C14/543 , C23C16/44 , C23C16/4412 , C23C16/45561 , C23C16/52 , H01L21/31
摘要： A storage device includes: a sidewall formed in a cylindrical shape; a cover wall disposed at an upper end of the sidewall; a bottom wall connected to a lower end of the sidewall and comprising a mounting surface mountable on a weight detector; a storage chamber surrounded by the sidewall, the cover wall, and the bottom wall; a recess communicating with the storage chamber and provided at the bottom wall; a communication pipe having one end connected to a bottom portion of the recess in a direction of gravity and the other end extending in a direction different from the direction of gravity in the bottom wall, the communication pipe having a diameter smaller than that of the recess; a gas flow path provided at a wall other than the bottom wall; and a liquid discharge path connected to a downstream side of the communication pipe.
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公开(公告)号：US20180223430A1
公开(公告)日：2018-08-09
申请号：US15746683
申请日：2016-07-25
IPC分类号： C23C16/455 , C23C16/54 , C23C16/458
CPC分类号： C23C16/45551 , C23C16/45553 , C23C16/45561 , C23C16/45578 , C23C16/4584 , C23C16/4586 , C23C16/545
摘要： A deposition apparatus including a frame and a cylindrical drum with a cylindrical surface that extends along a central axis. The drum has a first and a second end surface, which extend perpendicularly to the central axis. The drum is rotatably mounted in the frame and includes a plurality of gas zones positioned on the cylindrical surface. The included gas channels extend within the drum. At least a number of the gas zones are in gas connection with at least two channels. The deposition apparatus includes closing elements for closing off all but one of the at least two channels with which a said gas zone is in gas connection so that the type of gas supplied to the various gas zones along the drum surface is programmable.
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公开(公告)号：US09966270B2
公开(公告)日：2018-05-08
申请号：US14675659
申请日：2015-03-31
IPC分类号： H01L21/3065 , C23C16/455 , H01J37/32 , H01L21/31 , H01L21/67
CPC分类号： H01L21/3065 , C23C16/45561 , C23C16/45574 , H01J37/321 , H01J37/3244 , H01J37/32449 , H01J37/32926 , H01L21/31 , H01L21/67069
摘要： Methods, systems, and computer programs are presented for controlling gas flow in a semiconductor manufacturing chamber. The method includes flowing a reactant gas thorough an inner feed and a tuning gas through an outer feed surrounding the inner feed, such that the gases do not mix until both are introduced in the chamber. Further, the flow of the reactant gas is convective, and the flow of the tuning gas is directed at an angle from the direction of the reactant gas, providing a delivery of the tuning gas in closer proximity to the RF power before further mixing with the reactant gas. Radio frequency power is provided to the electrode to ignite a plasma using the reactant and tuning gases.
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公开(公告)号：US09951419B2
公开(公告)日：2018-04-24
申请号：US13602315
申请日：2012-09-03
申请人： Ying-Bing Jiang , Hongxia Zhang
发明人： Ying-Bing Jiang , Hongxia Zhang
IPC分类号： C23C16/44 , C23C16/455 , C04B35/622
CPC分类号： C23C16/4417 , C04B35/62222 , C23C16/4412 , C23C16/45544 , C23C16/45555 , C23C16/45561 , Y10T428/2982
摘要： Method and apparatus for making atomic layer deposition on powdered materials are provided. A rotary vessel with tilted rotation axis can be used as the deposition chamber. The rotary vessel can be directly used as the deposition chamber, or the rotary vessel is positioned inside a vacuum chamber that serves as the deposition chamber. A hallow shaft can be used to deliver rotary motion and facilitate pumping. A tube can be inserted into the hollow shaft or the rotary vessel to introduce precursors. Gas diffuser and slowly increased pumping speed can be used to reduce the agitation caused by gas flow. Intermittent rotation, variable rotary speed, extruding structures on inner surface of the rotary vessel, and the addition of easy-to-agitate powder or beads of other materials can be used to enhance the powder agitation caused by rotation.
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公开(公告)号：US09934960B2
公开(公告)日：2018-04-03
申请号：US15059591
申请日：2016-03-03
发明人： Hideki Horita , Risa Yamakoshi , Masato Terasaki
IPC分类号： H01L21/02 , C23C16/40 , C23C16/44 , C23C16/455
CPC分类号： H01L21/02164 , C23C16/401 , C23C16/4408 , C23C16/45502 , C23C16/45527 , C23C16/45561 , H01L21/02211 , H01L21/0228
摘要： A technique capable of suppressing the generation of foreign matter in a process container involves a method of manufacturing a semiconductor device including: (a) supplying a source gas to a substrate in a process container; (b) supplying an inert gas to an inner wall of an opening of the process container at a first flow rate while performing (a); (c) supplying a reactive gas to the substrate; and (d) supplying the inert gas to the inner wall at a second flow rate lower than the first flow rate while performing (c).
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7.发明申请公开(公告)号：US20170335455A1
公开(公告)日：2017-11-23
申请号：US15672163
申请日：2017-08-08
发明人： Boris Kobrin , Romuald Nowak , Richard C. Yi , Jeffrey D. Chinn
IPC分类号： C23C16/455 , B82Y30/00 , C23C16/448 , B05D1/00 , B05D3/14
CPC分类号： C23C16/45557 , B05D1/60 , B05D3/142 , B82Y30/00 , C23C16/4485 , C23C16/45561
摘要： An apparatus for vapor deposition of thin film coatings, including: a process controller; a plurality of precursor containers into which a plurality of coating precursors, each in the form of a liquid or a solid, are respectively placed; a plurality of precursor vapor reservoirs, each in communication with a respective one of said precursor containers; a plurality of in-line devices which control a vapor flow of a coating precursor vapor from one of said precursor containers into one of said precursor vapor reservoirs with which said precursor container is in communication upon receipt of a signal from said process controller; a plurality of precursor control valves which control vapor flow from said precursor vapor reservoir upon receipt of a signal from said process controller; and a process chamber for vapor deposition of said coating on a substrate when present in said process chamber.
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公开(公告)号：US20170327949A1
公开(公告)日：2017-11-16
申请号：US15525479
申请日：2015-11-02
申请人： FUJIKIN INCORPORATED
发明人： Atsushi Hidaka , Masaaki Nagase , Kaoru Hirata , Satoru Yamashita , Keiji Hirao , Kouji Nishino , Nobukazu Ikeda
IPC分类号： C23C16/455 , G01F23/26 , H01L21/67 , H01L21/31 , C23C16/448
CPC分类号： C23C16/45561 , B01J4/00 , C23C16/448 , C23C16/4481 , G01F23/22 , G01F23/247 , G01F23/26 , H01L21/31 , H01L21/67248
摘要： [Problem] To provide a liquid level indicator and a liquid raw material vaporization feeder, in which the time to detect a switch from the liquid phase to the gas phase has reduced flow rate dependence, and also the detection time can be shortened.[Means for Resolution] The present invention includes a chamber 2 that stores a liquid raw material, at least one protection tube 3 housing a resistance temperature detector for detecting the liquid level L1 in the chamber 2, and a flow controller 4 that controls the flow rate of the gas flowing out from the chamber 2 and feeds the same. The protection tube 3 is horizontally inserted into a sidewall 2a of the chamber 2 and fixed thereto.
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9.发明授权公开(公告)号：US09793107B2
公开(公告)日：2017-10-17
申请号：US14227809
申请日：2014-03-27
IPC分类号： C23C16/00 , H01L21/02 , C23C16/52 , C23C16/455 , C23C16/44 , H01J37/32 , C23C16/36 , C23C16/40
CPC分类号： H01L21/02126 , C23C16/36 , C23C16/401 , C23C16/4412 , C23C16/45523 , C23C16/45531 , C23C16/45534 , C23C16/45553 , C23C16/45561 , C23C16/45578 , C23C16/52 , H01J37/32449 , H01J37/32559 , H01L21/02211 , H01L21/0228 , H01L21/02321 , H01L21/02329 , H01L21/02332 , H01L21/02337 , H01L21/0234
摘要： A method of manufacturing a semiconductor device, includes: forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.
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公开(公告)号：US20170253970A1
公开(公告)日：2017-09-07
申请号：US15599338
申请日：2017-05-18
申请人： OSRAM OLED GmbH
发明人： Michael Popp , Richard Baisl
IPC分类号： C23C16/455
CPC分类号： C23C16/45544 , C23C16/45561
摘要： A method for operating an ALD coating system is disclosed. In an embodiment the method includes lowering a temperature of an intermediate container by a device for cooling the intermediate container so that a temperature of the intermediate container is below a temperature of a storage container, flowing a partial amount of the organometallic starting material into the intermediate container, heating the partial amount of the organometallic starting material by a device for heating the organometallic starting material so that a pressure of the partial amount of the organometallic starting material is constant over time and/or is greater than a pressure of the organometallic starting material in the storage container and opening a second multiway valve so that the partial amount of the organometallic starting material partially flows as a gas into a process chamber.
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